Micro-four-point Probe
Micro-four-point Probe
批准号:
0080931
负责人:
Peter Hesketh
金额:
$29.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-10-01 至 2005-03-31
中文摘要
0080931Hesketh微尺度阻抗和表面电位映射的表面的新方法的调查将进行。对原子力显微镜进行了改进,实现了微尺度两点和四点探针阻抗成像和微开尔文表面电位成像。定制的尖端将被微加工成在单个悬臂上具有多个尖端,并且在芯片上具有多个悬臂。操作原理类似于宏观四点探针,除了微加工四点探针在几个方面表现更好。 首先,测试将产生电导率,掺杂分布和表面电位的亚微米精度映射,是非破坏性的,并将提供来自周围环境,扫描探针平台的定量数据。研究生培训将提供表面探针显微镜和MEMS制造方法。探针与现有AFM技术的兼容性将促进这些分析方法的商业化。
英文摘要
0080931HeskethAn investigation of new methods for micro-scale impedance and surface potential mapping of surfaces will be undertaken. The AFM microscope has been modified to carryout micro-scale two and four point probe impedance mapping, and micro-Kelvin surface potential mapping. Custom tips will be microfabricated with multiple tips on a single cantilever, and multiple cantilevers on a chip. The principle of operation is similar to the macro four-point probe except the microfabricated four-point probe will perform better in several respects. First, the testing will yield sub-micron precision mapping of conductivity, doping profiles and surface potential, be non-destructive and will providing quantitative data from an ambient environment, scanning probe platform. Graduate student training will be provided in surface probe microscopy and MEMS fabrication methods. Commercialization of these analysis methods will be facilitated by the probes compatibility with existing AFM technology.
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批准号:1921608
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项目类别:Standard Grant
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资助金额:$2.0万
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财政年份:2019
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负责人:Peter Hesketh
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依托单位:
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批准号:1445385
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:2014
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负责人:Peter Hesketh
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依托单位:
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批准号:1159726
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项目类别:Standard Grant
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资助金额:$33.0万
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财政年份:2012
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负责人:Peter Hesketh
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依托单位:
Workshop on Novel Sampling and Sensing for Improving Food Safety-Georgia Institute of Technology-November, 2010
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批准号:1019623
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项目类别:Standard Grant
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资助金额:$0.76万
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财政年份:2010
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负责人:Peter Hesketh
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依托单位:
Integrated Sensing Porous Silicon Integrated Sensor Arrays
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批准号:0225340
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2002
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负责人:Peter Hesketh
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依托单位:
High Order Crystal Plane Selectivity in Silicon Anisotropic Wet Etching
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批准号:9121862
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项目类别:Standard Grant
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资助金额:$6.89万
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财政年份:1992
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负责人:Peter Hesketh
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依托单位:
国内基金
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批准号:32300302
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项目类别:青年科学基金项目
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资助金额:30万元
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批准年份:2023
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负责人:张春霞
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依托单位: