CAREER: Ultra-High-Vacuum Chemical Vapor Deposition of Al2O3/ZrO2 Alloys

用高介电常数电介质成功替代基于sio2的金属氧化物半导体场效应晶体管（MOSFET）栅极电介质，是继续推动构建更小、更快、更低功耗、更集成电路的关键一步。计划中的研究将通过整合极薄（10nm） Al2O3/ZrO2合金薄膜沉积的研究、前驱体的合成和评估、反应机制和动力学表达的确定、沉积薄膜材料特性的表征以及通过测试电容器和晶体管结构来测量薄膜的电性能来解决这一挑战。CAREER项目的目标是开发一种材料系统，该系统具有栅极电介质所需的适当材料和电气特性，并且能够满足微电子设备工艺流程的加工和集成挑战。这项工作的教育部分将包括将MOSFET工艺作为研究计划的一部分，作为实验室模块集成到现有的半导体材料加工课程中。它还将用于为范德比尔特大学材料科学跨学科研究生课程设计一个新的实验课程。

ABSTRACTPI: Bridget Rogers Institution: Vanderbilt UniversityProposal Number: 0092792Successful replacement of SiO2-based metal-oxide-semiconductor field effect transistor (MOSFET) gate dielectrics by a high-permitivity dielectric is a critical step in the continued drive to build smaller, faster, lower-power, more-integrated circuits. The planned research addresses this challenge by integrating studies of extremely thin (10nm) Al2O3/ZrO2 alloy film deposition, synthesis and evaluation of precursors, determination of reaction mechanisms and kinetic expressions, characterization of material properties of the deposited films, and measurement of the films' electrical properties via testing of capacitor and transistor structures. The goal of the CAREER project is to develop a material system that has the proper materials and electrical properties that are required of a gate dielectric and that can meet the processing and integration challenges of a microelectronic device process flow.The educational component of the work will involve integrating the MOSFET process, developed as part of the research program, as laboratory modules into an existing course on semiconductor materials processing. It will also be used to design a new laboratory course for Vanderbilt's Interdisciplinary Graduate Program in Materials Science.