CAREER: In Situ Monitoring of Surface Phenomena during Silicon Germanium Deposition and Etching

这项职业计划的重点是用于未来光电子应用的SiGe在Si上的纳米异质外延。将纳米结构结构集成到制造中带来了许多工程挑战，例如在硅上选择性地沉积SiGe，以及以最小的临界尺寸损失进行理想的图案转移。这里的策略是从根本上了解SiGe表面上发生的界面现象。该方法利用了现场实时红外和拉曼光谱技术。实时诊断提供了一种捕捉动态SiGe表面对沉积和刻蚀前驱体响应的方法。在这方面，将利用衰减全反射傅里叶变换红外光谱和衰减全反射表面增强拉曼光谱的检测灵敏度和偏振相关性。这两种技术将有助于区分等离子体刻蚀SiGe过程中的侧壁表面现象和沟槽底部现象。它还用于从实验测量的时变等离子体和衬底电位中提取刻蚀等离子体中的离子能量分布函数。电容式分压器和朗缪尔探头可以测量这些电位。分布函数将与所得到的蚀刻轮廓相关联。从综合诊断中获得的重要信息有望提高对SiGe沉积和刻蚀机制以及SiGe沟槽内离子/中性输运的了解。所获得的知识还将有助于理想的图形转换，有助于实现SiGe的新应用，并指导计算轮廓模拟器的开发。将开展三项教育活动：(1)开发新的半导体加工选修课，(2)通过研究提供密切的指导和职业咨询，以及(3)启动高中外展计划。这些教育活动将从研究中获得强大的借鉴作用。将开发化学气相沉积和等离子体/表面诊断学课程，为学生在电子行业或相关研究领域的职业生涯提供替代场所。除了研究生，本科生还将积极参与研究。通过外展计划积极招募高三学生，让未来的高中生了解新墨西哥州大学以研究为导向的教育机会。该推广方案还有助于提高接受中学后教育的高中生的比例，特别是增加西班牙裔学生的入学率。后一个目标符合UNM的机构兴趣，UNM是一家得到联邦承认的拉美裔服务机构。%该项目解决具有高度技术相关性的材料科学专题领域的基础研究问题。该项目的范围将使学生在材料合成、加工和表征方面面临挑战。该项目的一个重要特点是高度重视教育，并将研究与教育相结合。***

This CAREER project centers on nanoheteroepitaxy of SiGe on Si for future optoelectronic applications. Integrating nanostructure architectures into manufacturing poses numerous engineering challenges such as selective deposition of SiGe on Si and ideal pattern transfer with minimal critical dimensional loss. The strategy here is to understand fundamentally interfacial phenomena occurring on SiGe surfaces. The approach utilizes in situ real time infrared and Raman spectroscopic techniques. The real time diagnostics provide a means to capture the dynamic SiGe surface response to deposition and etch precursors. In this regard, the detection sensitivity and the polarization dependence of attenuated-total-reflection Fourier transform infrared spectroscopy and attenuated-total-reflection surface enhanced Raman spectroscopy will be exploited. The two techniques will help distinguish sidewall surface phenomena from trench bottom phenomena during plasma etching of SiGe. It is also intended to extract the ion energy distribution function in etch plasmas from experimentally measured time-varying plasma and substrate potentials. Capacitive divider and Langmuir probes can measure these potentials. The distribution functions will be correlated to resulting etch profiles. The salient information gained from the comprehensive diagnostics is expected to bring improved understanding of deposition and etching mechanisms of SiGe as well as ion/neutral transport inside the SiGe trenches. The knowledge gained will also facilitate ideal pattern transfer, help realize novel applications of SiGe, and guide development of computational profile simulators. Three educational activities will be pursued: (1) develop new elective courses in semiconductor processing, (2) provide close mentorship and career counseling through research, and (3) initiate a high school outreach program. These educational activities will draw strongly from the research. Courses in chemical vapor deposition and plasma/surface diagnostics will be developed to provide students alternate venues to prepare for a career in the electronics industry or related research fields. In addition to graduate students, undergraduate students will actively be involved in the research. High school seniors will be aggressively recruited using the outreach program to inform prospective high school students of the research-oriented educational opportunities at UNM. The outreach program additionally serves to improve the percentage of high school students pursuing post-secondary education and particularly to increase the enrollment of Hispanic-descent students. The latter goal meets an institutional interest of UNM, a federally recognized Hispanic-serving institution.%%% The project addresses fundamental research issues in a topical area of materials science having high technological relevance. The scope of the project will expose students to challenges in materials synthesis, processing, and characterization. An important feature of the project is the strong emphasis on education, and the integration of research and education. ***