Collaborative Research: Large-Scale Patterning of Germanium Quantum Dots by Stress Transfer

合作研究：通过应力传递实现锗量子点的大规模图案化

• 批准号: 1068970
• 负责人: Sang Han
• 金额: $ 27万
• 依托单位: University of New Mexico
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-07-01 至 2014-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1068970&HistoricalAwards=false
• 关键词: Collaborative; Research; Large; Scale; Patterning

The goal of this collaborative research project is aimed at studying and developing a high-throughput, template-based method for the growth of highly ordered arrays of semiconductor quantum dots in the silicon-germanium system. An integrated approach based on theory, multiscale computer simulation, and experiments will be utilized to perform the study. Atomic-scale computer simulation techniques such as the Monte Carlo method will be employed to identify optimal conditions for generating micro-patterned compositional distributions in a silicon-germanium substrate using stress applied via a patterned, reusable template. The suitability of the compositional variations induced within the substrate, and the resultant surface strain patterns, will then be investigated in the context of growing ordered germanium nanostructures on the substrate using molecular beam epitaxy. A dedicated experimental apparatus will be fabricated for performing the template-based compositional patterning of a substrate silicon-germanium wafer. High-resolution electron microscopy will be performed and used throughout this study in order to establish direct connections with atomic-scale and multiscale simulation predictions.This research will establish materials and operating-condition criteria required for successfully realizing a conceptually simple, cost-effective, template-based method for growing a highly ordered two-dimensional array of germanium nanostructures on silicon-germanium substrates. The primary goals of this work are to understand quantitatively the basic atomistic mechanisms that govern compositional patterning under applied stress and the coupling of this stress to nanostructure ordering, and then the use of this understanding to demonstrate experimentally the germanium quantum dot array formation. If successful, this work could lead to a practical route for fabrication of high-density nanostructure arrays with a variety of potentially important applications, ranging from sensors, to data storage, to quantum computing. Moreover, many of the basic atomistic sub-processes that will be studied, along with the associated computational and experimental techniques that will be developed, may be relevant to a wide range of materials processing applications.

该合作研究项目的目标是研究和开发一种高通量的基于模板的方法，用于在硅锗系统中生长高度有序的半导体量子点阵列。 基于理论，多尺度计算机模拟和实验的综合方法将被用来进行研究。 原子尺度的计算机模拟技术，如蒙特卡罗方法，将被用来确定最佳条件，用于产生微图案化的成分分布在硅锗衬底使用的应力通过图案化的，可重复使用的模板。 然后，将在使用分子束外延在衬底上生长有序锗纳米结构的上下文中研究在衬底内诱导的组成变化的适合性以及由此产生的表面应变图案。 一个专用的实验装置将被制造用于执行基于模板的衬底硅锗晶片的组合图案化。 高分辨率电子显微镜将进行和使用整个研究，以建立与原子尺度和多尺度模拟predictions.This研究的直接连接将建立成功实现一个概念简单，成本效益高，基于模板的方法生长高度有序的二维阵列的锗纳米结构的硅锗基板上所需的材料和操作条件的标准。 这项工作的主要目标是定量地了解基本的原子机制，支配在施加的应力下的组成图案化和这种应力的耦合到纳米结构的有序性，然后使用这种理解来实验证明锗量子点阵列的形成。 如果成功的话，这项工作可能会为制造高密度纳米结构阵列提供一条实用的路线，这些阵列具有各种潜在的重要应用，从传感器到数据存储，再到量子计算。 此外，许多基本的原子的子过程，将被研究，沿着与相关的计算和实验技术，将被开发，可能是相关的材料加工应用范围广泛。