SBIR Phase I: Focused Beam Total Reflection X-Ray Fluorescence Analysis Using Doubly-Curved Crystals

这个小型企业创新研究(SBIR)第一阶段项目将致力于改善微电子行业的晶片污染分析。第一阶段将研究一种名为聚焦束全反射x射线荧光(TXRF)的新技术。基于点聚焦环形晶体光学，聚焦光束TXRF有望将空间分辨率提高100倍以上，并提供比传统TXRF方法高30倍的对硅上局部污染物的检测灵敏度。这项技术还有可能用于低水平的铝(Al)、钠(Na)和其他低原子序数(Z)元素，这些元素无法通过传统的TXRF和其他技术有效地执行。第一阶段将提高过渡金属检测的灵敏度和分辨率。此外，还将进行理论计算，以确定铝和钠检测在晶片污染控制中的可行性。聚焦束TXRF分析在微电子工业中用于晶片污染控制的商业应用，包括高分辨率的局部和均匀污染物。这些污染物包括许多重要元素，如过渡金属、铝、钠等低Z元素。

This Small Business Innovation Research (SBIR) Phase I project will address improved wafer contamination analysis in the microelectronics industry. Phase I will examine a new technique called focused beam total reflection x-ray fluorescence (TXRF). Based on point-focusing toroidal crystal optics, focused beam TXRF is expected to improve spatial resolution by a factor more than 100 and provide 30 times better detection sensitivity for local contaminants on silicon (Si) than the conventional TXRF method. This technique also has potential for low level aluminum (Al), sodium (Na), and other low atomic-number (Z) elements that not performed effectively by conventional TXRF and other techniques. Phase I will demonstrate improved sensitivity and resolution for transition metal detection. Theoretical calculations will be also carried out to determine the feasibility for Al and Na detection in wafer contamination control.Focused beam TXRF analysis has commercial applications in the microelectronics industry for wafer contamination control, including localized and homogeneous contaminants with high resolution. These contaminants include many important elements, such as transition metals, Al, Na and other low Z elements.