U.S.-Korea Cooperative Research: Study of the Interaction Between Slurry Particles and Wafer Surfaces for Post-Chemical Mechanical Polishing Processes

化学机械抛光后硅片的布斯奈纳颗粒污染是影响半导体制造成品率的主要问题。浆料颗粒的去除和粘附力受颗粒与表面初始接触后的抛光、清洁、漂洗和干燥过程影响很大。在汉阳大学和东北大学拟议的国际合作中，将通过颗粒和晶片基板的电学表征以及通过测量这些颗粒的去除和粘附力来研究浆料颗粒和晶片表面之间的相互作用。该项目的目标是了解亚微米颗粒的颗粒附着和去除机制。将研究流体动力脱除力和Zeta电位对浆料颗粒粘附性和脱除性的影响。这项研究还将确定每个颗粒/膜系统的清洁技术的有效性。

0140529Busnaina Particulate contamination of silicon wafers after chemical mechanical polishing processes is a major problem that affects yield in semiconductor manufacturing. The removal and adhesion forces of slurry particles are greatly affected by the polishing, cleaning, rinsing and drying processes that follow the particle initial contact with the surface. In this proposed international collaboration between Hanyang University and Northeastern University, the interaction between slurry particles and wafer surfaces will be investigated by electrical characterization of the particles and wafer substrates and by measuring the removal and the adhesion forces of these particles. The goal of the project is to understand particle adhesion and removal mechanisms for submicron particles. Hydrodynamic removal forces and the effect of the zeta potential on slurry particle adhesion and removal will be investigated. The study will also determine the effectiveness of the cleaning techniques for each particle/film systems.