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GOALI: Modeling the Industrial Growth of CdZnTe Substrate Crystals

GOALI: Modeling the Industrial Growth of CdZnTe Substrate Crystals
目标:模拟 CdZnTe 衬底晶体的工业生长
批准号:
0201486
负责人:
Jeffrey Derby
金额:
$43.83万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2002
资助国家:
美国
项目状态:
已结题
起止时间:
2002-07-01 至 2006-06-30

项目摘要

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中文摘要
翻译
建议编号:CTS-0201486主要研究人员:Jeffrey J.Derby,Podromos Daoutidis和Csaba Szels机构:明尼苏达大学建议标题:GALI:为镉锌碲衬底晶体的工业生长建模建议明尼苏达大学的研究人员和电动汽车产品公司之间的一个合作计划,以开发、验证和应用新的垂直布里奇曼生长理论模型,用于碲化镉锌(CZT)的垂直布里奇曼生长,这是一种在红外和核探测器应用中非常重要的半导体材料。具体任务包括开发垂直布里奇曼生长的模型,评估可能通过坩埚旋转技术预期的工艺改进,以及应用基于模型的控制策略来控制熔体-晶体界面形状和抑制流动不稳定性和成分不均匀。该研究计划将把电动汽车产品的实验和工艺开发专业知识与明尼苏达大学的理论计算能力和先进控制算法开发结合起来。如果成功,这些结果可能会导致更好的工艺操作和广泛的晶体生长系统的设计,以更高的生产率和更低的成本生产更高质量的晶体。
英文摘要
ABSTRACTProposal Number: CTS-0201486 Principal Investigator: Jeffrey J. Derby, Podromos Daoutidis, and Csaba SzelesInstitution: University of MinnesotaProposal Title: GOALI: Modeling the Industrial Growth of CdZnTe Substrate CrystalsThe proposal is for a cooperative program between investigators at the University of Minnesota and eV Products to develop, validate, and apply new theoretical models for vertical Bridgman growth of cadmium zinc telluride (CZT), a semi-conductor material important in infrared and nuclear detector applications. Specific tasks include model development for vertical Bridgman growth, assessment of process improvements that may be expected from crucible rotation techniques, and the application of model based control strategies for melt-crystal interface shape and for suppression of flow instabilities and compositional inhomogeneities. The research program will combine experimental and process development expertise at eV Products with the theoretical computational capability and advanced control algorithm development at the University of Minnesota. If successful, the results could lead to better process operation and design for a broad spectrum of crystal growth systems, yielding better quality crystals at higher production rates and lower costs.
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GOALI: Manufacturing Large, Diamond Single Crystals via High-Pressure, High-Temperature Growth
  • 批准号:
    2308877
  • 项目类别:
    Standard Grant
  • 资助金额:
    $44.28万
  • 财政年份:
    2023
  • 负责人:
    Jeffrey Derby
  • 依托单位:
GOALI: Toward Improving Quality and Yield of Large-Area, Single-Crystal Sapphire Wafers via Fundamental Understanding of Bubble Engulfment During Growth
  • 批准号:
    1760689
  • 项目类别:
    Standard Grant
  • 资助金额:
    $40.31万
  • 财政年份:
    2018
  • 负责人:
    Jeffrey Derby
  • 依托单位:
Workshop: Ninth International Workshop on Modeling in Crystal Growth (IWMCG-9); Kailua-Kona, Hawaii; 21-24 October 2018
  • 批准号:
    1853512
  • 项目类别:
    Standard Grant
  • 资助金额:
    $1.0万
  • 财政年份:
    2018
  • 负责人:
    Jeffrey Derby
  • 依托单位:
Toward viable horizontal ribbon growth of solar silicon: Understanding and ameliorating process instabilities
  • 批准号:
    1336164
  • 项目类别:
    Standard Grant
  • 资助金额:
    $31.86万
  • 财政年份:
    2013
  • 负责人:
    Jeffrey Derby
  • 依托单位:
国内基金
海外基金
Galaxy Analytical Modeling Evolution (GAME) and cosmological hydrodynamic simulations.
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    10.0万元
  • 批准年份:
    2025
  • 负责人:
    Antonios Katsianis
  • 依托单位: