Modeling of P-Channel Si1-xGex MOSFET Devices and Silicon-On-Insulator (SOI) Device Structures

这项为期三年的研究项目的目标包括调查基于替代器件技术的器件的操作，包括p通道应变SixGe1-x和窄宽度SOI器件结构。为此目的开发的模拟工具将从近似层次中的半经典玻尔兹曼方程水平开始，并扩展到在最基本的水平上直接模拟各种近似方案中的量子输运。主要目标是开发基于半经典玻尔兹曼方程直接解的工具，使用全带或非抛物能带模型。这些技术将与基于多网格和Bi-CGSTAB方法（包括任意器件几何形状的非均匀网格）的鲁棒多处理器现场求解器相结合。离散杂质效应将通过量子分子动力学方案来评估基于随机杂质分布的器件工作特性的波动。将与工业伙伴合作，与最先进的设备技术进行比较和校准。由于三维半经典和量子器件建模的计算需求，本研究将得到基于分布式工作站集群的高性能计算环境的支持。除了研究之外，这个研究项目还会有显著的教育改进。这些措施包括引入计算电子学领域的新课程，网络活动以及将少数民族和本科生纳入研究。因此，他们将帮助我们的研究生在工业界和学术界介绍具有挑战性的计算电子学世界。

The goals of this three-year research project include investigation of the operation of devices based on alternate device technologies, including p-channel strained SixGe1-x and narrow-width SOI device structures. The simulation tools that will be developed for this purpose will begin at the semi-classical Boltzmann equation level in the hierarchy of approximations, and extend to direct simulation of quantum transport within various approximation schemes at the most fundamental level. The main goals are todevelop tools based on direct solution of the semiclassical Boltzman equation using either full-band or non-parabolic energy band models. These techniques will be combined with robust, multi-processor field solvers based on multi-grid and Bi-CGSTAB methods including non-uniform grids for arbitrary device geometries. Discrete impurity effects will be included through a quantum molecular dynamics scheme to assess the fluctuation in device operating characteristics based on random impurity distributions. Collaboration with industrial partners will be undertaken for comparison and calibration with state of the art device technologies. Due to the computational demands of both 3D semi-classical and quantum device modeling, the proposed research will be supported by high-performance computing environments based on distributed workstation clusters. In addition to research, there will be significant educational enhancements that will accompany this research project. These include introduction of new classes in the area of Computational Electronics, Web-based activities and inclusion of minorities and undergraduates in research. As such, they will help introduce our graduate students to the challenging world of Computational Electronics in both Industry and Academia.