Optical Studies of High-field Electron and Hole Transport in Nitride-based Wide Bandgap Semiconductor Nanostructures

本项目研究氮化物基宽禁带半导体纳米结构中的高场载流子瞬时输运。该方法是利用时间分辨的亚皮秒拉曼光谱系统地研究氮化物基宽禁带半导体纳米结构中的电子和空穴输运特性，如速度过冲和声子动力学。目标是更好地理解基本现象，确定最佳的器件操作条件，并为设计新一类高性能电子设备提供基础。%该项目的一个重要影响是通过研究和教育的整合在教育和人力资源开发方面。拟议的研究计划将加强PI的学生指导活动，并增加吸引在亚利桑那州立大学攻读高级学位的少数族裔学生的机会。拟议的研究计划将进一步加强纳米结构材料以及在计算和信号处理技术方面具有优势的宽带隙半导体的现有基础设施。***

This project addresses high-field carrier transient transport in nitride-based wide bandgap semiconductor nanostructures. The approach is to conduct systematic studies of transient electron and hole transport properties such as velocity overshoot and phonon dynamics in nitride-based wide bandgap semiconductor nanostructures by using time-resolved, sub-picosecond Raman spectroscopy. Goals are to achieve greater understanding of fundamental phenomena to define optimal device operation conditions, and to provide the basis for the design of a new class of high performance electronic devices. %%% An important impact of the project is in education and human resource development through the integration of research and education. The proposed research program will enhance the PI's student mentorship activities and increase chances of attracting minority students pursuing advanced degrees at ASU. The proposed research program will further enhance the existing infrastructure of both nanostructured materials as well as wide bandgap semiconductors having advantages in computing and signal processing technologies. ***