Electron Spin Effects in Semiconductor Nanostructures

目前，在当代电子学中，世界范围内正在进行一场激烈的运动，以探索电子自旋的作用-除了它的电荷-着眼于增加电子微芯片设备的功能，特别是在计算领域。 本提案通过采用最先进的技术来制造和表征一系列新颖的半导体纳米尺度结构来解决这个问题，其中电子自旋的作用通过并入磁性离子而被放大。通过培训研究生和本科生在尖端半导体制造技术以及设计多功能材料，拟议的计划预计将产生广泛的影响远远超出其直接目标，因为在材料科学的这些领域的技能是在美国的广泛需求工业，国家实验室和学术界。此外，圣母大学团队已经通过提供研究样本或进行联合实验，拥有出色的合作记录（目前与其他40多个机构合作）。随着对自旋基电子材料需求的不断增长，预计这种传播和分享成果的活动将进一步加强。技术建议侧重于三个不同但互补的领域，涉及分子束外延（MBE）和低维磁性半导体系统的物理研究：（a）（III，Mn）V铁磁半导体（FMS）合金中基本过程的研究;（B）研究在纳米尺度上图案化的FMS结构的性质;以及（c）探索性地研究新的FMS系统的生长。该计划预计将有智力价值和广泛的影响远远超出其具体的科学目标，有助于武器库的自旋电子材料一般;通过培训研究生和本科生掌握尖端半导体制造技术和设计多功能材料，从而在美国工业、国家实验室、和学术界。此外，圣母大学团队已经通过提供研究样本或进行联合实验，拥有出色的合作记录（目前与其他40多个机构合作）。随着对自旋电子材料的需求继续增长，预计这种传播和分享成果的活动将进一步加强。

Non-TechnicalThere is currently an intense worldwide movement in contemporary electronics to explore the role of electron spin - in addition to its charge - with an eye on increasing the functionality of electronic microchip devices, particularly in the realm of computation. The present proposal addresses this issue by employing state-of-the-art techniques to fabricate and characterize a series of novel semiconductor nano-scale structures in which the role of electron spin is magnified by the incorporation of magnetic ions. By training graduate and undergraduate students in cutting-edge semiconductor fabrication techniques as well as in designing multi-functional materials, the proposed program is expected to have broad impact far beyond its immediate goals, since skills in these areas of materials science are in broad demand in U.S. Industry, National Laboratories, and Academia. Additionally, the Notre Dame team already has an exceptional track record of collaborations (currently with more than forty other institutions) either by providing research samples or by carrying out joint experiments. This activity of dissemination and sharing of results is expected to further intensify as the demand for spin-based electronic materials continues to grow.TechnicalThe proposal focuses on three distinct but complementary areas involving molecular beam epitaxy (MBE) and physical studies of low-dimensional magnetic semiconductor systems: (a) investigation of basic processes in (III,Mn)V ferromagnetic semiconductor (FMS) alloys; (b) investigation of properties of FMS structures patterned on the nanoscale; and (c) exploratory growth studies of new FMS systems. The proposed program is expected to have intellectual merit and broad impact far beyond its specific scientific goals by contributing to the arsenal of spin-electronics materials generally; and by training graduate and undergraduate students in cutting-edge semiconductor fabrication techniques and in designing multi-functional materials, thus contributing to U.S. manpower skills in areas which are in wide demand in U.S. Industry, National Laboratories, and Academia. Additionally, the Notre Dame team already has an exceptional track record of collaborations (currently with more than forty other institutions) either by providing research samples or by carrying out joint experiments. This activity of dissemination and sharing of results is expected to further intensify as the demand for spin-electronic materials continues to grow.