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NIRT: Nanostructure Components for Terahertz Spectroscopy on a Chip

NIRT: Nanostructure Components for Terahertz Spectroscopy on a Chip
NIRT:芯片上太赫兹光谱的纳米结构组件
批准号:
0609146
负责人:
Andrea Markelz
金额:
$118.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-07-01 至 2012-06-30

项目摘要

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中文摘要
翻译
该NIRT方案致力于实现基于纳米结构半导体系统的频率可调太赫兹(THz)源和探测器。这些活性纳米结构的共同特点是其特征激发的能量尺度在太赫兹范围内。为了解决宽频率范围内的技术需求,我们探索了通过利用受限几何中的Plas-mons以及量子点接触中的电子的光激发来实现其功能的器件。这些设备应该适合集成到大规模阵列中,提供执行复杂的时间和空间信号处理的能力。研究团队由来自布法罗大学、加州大学圣巴巴拉分校、皇后区学院和金斯伯勒社区学院的教职员工组成。它在半导体纳米器件的制造、直流和太赫兹表征以及理论建模方面拥有广泛的专业知识。该小组还得到了理化学研究所(日本理化学研究所)和桑迪亚国家实验室的合作者的补充。这项工作应该会导致开发出与传统微电子学完全集成的新型太赫兹源和探测器。这些设备应该比现有技术有几个改进,例如广泛可调的响应频率、低功耗和更高的灵敏度。它们应该会在许多应用中得到应用,包括信号处理、国土防御、制药科学和生物医学。这项NIRT为研究生和本科生提供纳米电子传感器方面的培训,这是一个对国家经济和国防利益至关重要的领域。它还通过实习和迷你研讨会的方式,增加了社区大学生对纳米技术的接触。还计划邀请高中教师参与这项研究。这项计划的主题是纳米级设备和系统架构。
英文摘要
AbstractThis NIRT proposal focuses on the implementation of frequency-tunable terahertz (THz) sources and detectors based on nanostructured semiconductor systems. The common fea-ture of these active nanostructures is that the energy scales of their characteristic excita-tions lie within the THz range. To address the needs for technology over a wide fre-quency range, we explore devices that achieve their functionality by making use of plas-mons in confined geometries, as well as photoexcitation of electrons in quantum-point-contacts. These devices should be suitable for integration into large-scale arrays, provid-ing the capability to perform sophisticated temporal and spatial signal processing. The team assembled to pursue this research consists of faculty from the University at Buffalo, UC Santa Barbara, Queens College and Kingsborough Community College. It has wide expertise in the fabrication, DC and THz characterization, and theoretical modeling of semiconductor nanodevices. The group is complemented by collaborators at the Institute of Physical and Chemical Research (RIKEN, Japan) and Sandia National Laboratories.Intellectual MeritThis work should lead to the development of novel THz sources and detectors that are fully integrable with conventional microelectronics. These devices should show several improvements over existing technology, such as widely-tunable response frequency, low power consumption, and enhanced sensitivity. They should find use in many applications, including signal processing, homeland defense, pharmaceutical science and biomedicine.Broader ImpactThis NIRT provides training for graduate and undergraduate students in nanoelectronic sensors, a vital area to the economic and defense interests of the nation. It also increases the exposure of community-college students to nanotechnology, by means of internships and mini workshops. Opportunities to engage high-school teachers in the research are also planned.This program addresses the theme of Nanoscale Devices and System Architecture.
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