课题基金 / 基金详情

Doping-Free Formation of p-n Junctions

Doping-Free Formation of p-n Junctions
p-n 结的无掺杂形成
批准号:
0620319
负责人:
Meng Tao
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-08-15 至 2011-07-31

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中文摘要
翻译
p-n结的无掺杂形成主要研究者:孟涛(德克萨斯大学阿灵顿分校)项目摘要本研究的目的是开发和理解一种在半导体中形成p-n结的根本不同的方法。传统上,通过将掺杂剂扩散或注入到半导体中来形成p-n结。该提议中的方法不涉及任何掺杂剂,而是对半导体表面进行原子级工程以消除表面态。当具有低功函数的金属与这种p型半导体接触时,其表面变成相反的类型,并且形成p-n结而无需掺杂。p-n结是大多数现代半导体器件中不可缺少的部分,这些器件是信息技术中的构建模块。这项研究可能从根本上改变当今半导体器件的制造方式,并使新的半导体器件具有前所未有的功能。一个小企业创新研究第一阶段的建议已经提交,应用这种技术的节能制造半导体器件。初步结果表明,这种无掺杂的p-n结是可能的。建议的研究活动包括无掺杂p-n结的表征和理解,以及证明负肖特基势垒的方法。建议的教育活动包括由首席研究员开发课程,学生参与这项研究,以及为半导体行业提供服务。该提案描述了这些活动的详细计划,包括将该项目的成果纳入电气工程课程;关于这一主题的一个章节作为学生的补充阅读材料;监督博士、硕士和本科生的研究,特别努力招收本科生,其中许多人来自代表性不足的群体;以及透过大学与产业合作,为社会经济发展作出贡献。
英文摘要
Doping-Free Formation of p-n JunctionsPrincipal Investigator: Meng Tao (University of Texas at Arlington)Project SummaryThe objective of this research is to develop and understand a fundamentally-different approach to form p-n junctions in semiconductors. A p-n junction is traditionally formed by diffusion or implantation of a dopant into a semiconductor. The approach in this proposal does not involve any dopant, but atomic-scale engineering of a semiconductor surface to eliminate surface states. When a metal with a low work function is in contact with a p-type semiconductor of this kind, its surface is turned into the opposite type and a p-n junction is formed without doping.A p-n junction is an indispensable part in most modern semiconductor devices, which are the building blocks in the information technology. This research could fundamentally change the way semiconductor devices are fabricated today and enable new semiconductor devices with unprecedented features. A Small Business Innovation Research Phase I proposal has been submitted to apply this technique for energy-efficient manufacturing of semiconductor devices. Preliminary results suggest that such a doping-free p-n junction is possible. The research activities proposed include characterization and understanding of doping-free p-n junctions and methodology for demonstrating a negative Schottky barrier.The educational activities proposed include curriculum development by the principal investigator, student participation in this research, and services to semiconductor industry. The proposal describes a detailed plan for these activities, including incorporation of results from this project to the electrical engineering curriculum; a book chapter on this subject as supplemental reading materials for students; supervision of PhD, MS, and undergraduate students' research, with a special effort to recruit undergraduate students, many of whom are from underrepresented groups; and contribution to economic development of the community through university-industry collaborations.
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