Degradation-free SiC BJT Technology based on Novel Low-Temperature Selective Epitaxial Growth

这项研究的目的是解决阻碍碳化硅大功率高频双极结晶体管商业化的根本问题。该方法采用了一种新的低温选择性外延生长工艺(LTSEG)。LTSEG提供了消除器件制造序列中有问题的离子注入和等离子刻蚀工艺的机会。智能优点：密西西比州立大学发现的低温生长技术能够实现选择性外延和自对准器件制造，而这在以前是碳化硅不可能实现的。新的器件技术能够消除最有害的问题--碳化硅晶体管复合增强型堆叠故障的产生，从而导致增益下降。创纪录的p型掺杂效率和消除注入损伤将极大地提高外围基极电阻和发射极注入效率。碳化硅双极型晶体管作为一种军事和空间应用的功率开关而备受期待。此外，拟议中的研究可以促进混合动力汽车中用碳化硅取代硅电子产品的尝试，这是美国汽车业推动的一项战略，以减少对外国石油供应的依赖。在海外进行的激进研发威胁到美国在碳化硅领域的领导地位。建议的发展带来了强大的竞争优势。更广泛的影响：这项研究具有独特的地位，通过为密西西比州大学和致力于碳化硅技术商业化的当地小企业分支机构之间的合作提供新的机会，从而为密西西比州的工业增长做出贡献。它将是吸引新学生进入研究生课程和创造当地就业机会的极好工具。

The objective of this research is to address the fundamental problems preventing commercialization of the silicon carbide high-power and high-frequency bipolar junction transistor. The approach utilizes a novel low-temperature selective epitaxial growth process (LTSEG). LTSEG offers an opportunity to eliminate the problematic ion implantation and plasma etching processes in device fabrication sequence.Intellectual Merit:The low-temperature growth technique discovered at Mississippi State University enables selective epitaxy and self-aligned device fabrication that had been previously impossible for silicon carbide. The new device technology is capable of eliminating the most detrimental problem of SiC transistor - recombination-enhanced stacking fault generation causing gain degradation. Record-high p-type doping efficiency and elimination of the implantation damage will drastically improve the peripheral base resistance and emitter injection efficiency.Silicon carbide bipolar transistor is eagerly anticipated as a power switch for military and space applications. In addition, the proposed research can facilitate the attempted replacement of Si electronics with silicon carbide in hybrid electric vehicles, which is pushed by the US automotive industry as a strategy for reducing dependence on the foreign oil supply. Aggressive R&D conducted abroad threatens the leadership of the US in silicon carbide field. The proposed development brings strong competitive advantage. Broader Impact:The research is uniquely positioned to contribute to the industrial growth in Mississippi by offering new opportunities for collaboration between the university and a local small business spin-off dedicated to commercialization of SiC technologies. It will be an excellent tool for attracting new students into the graduate programs and creating local employment opportunities.