SBIR Phase I: Advanced Lift-off Technology for Low cost III-V Solar Cell Manufacturing

这个SBIR一期研究项目将为先进的可再生能源技术开发低成本高质量的化合物半导体薄膜。该项目将研究多层外延举升（MELO）技术，因为它适用于一组生长在砷化镓上的光伏（PV）外延结构。目前最先进的光伏器件是在昂贵的砷化镓衬底上制造的，然后以高成本将其集成到最终产品中。通过将整个制造周期扩展到一个晶圆上的许多结构上，MELO将显着降低成本，降低到仅外延材料成本。该公司将建立直径为100mm的外延Lift Off技术，该技术已扩展到可在一片晶圆上生长的外延结构的最大数量。这项拟议活动的更广泛影响包括生产与MELO技术兼容的任何结构的可能性。这可能包括成本更低的异极双极晶体管（HBT）器件，直接受益于转移到更合适的散热和电隔离基板。

This SBIR Phase I research project will develop a lower cost high quality compound semiconductor thin film for advanced renewable energy technology. This program will investigate Multiple-layer Epitaxial Lift Off (MELO) technique as it applies to a group of Photovoltaic (PV) epitaxial structures grown on GaAs. Current state of the art PV devices are fabricated on expensive GaAs substrates, which are then incorporated into the final product at high costs. MELO will significantly reduce the cost down to the epitaxial material costs alone by spreading the total manufacturing cycle over many structures on one wafer. The company will have established a 100mm diameter Epitaxial Lift Off technology that has been extended to the maximum number of epitaxial structures that can be grown on one wafer. The broader impact of this proposed activity includes the possibility to produce any structure compatible with MELO technology. This may include lower cost Hetero-Bipolar Transistor (HBT) devices that directly benefit from the transfer to more suitable thermally dissipative and electrically isolated substrates.