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Fundamental Understanding of Enhanced Thermal Transport at Aligned Carbon Nanotube/Substrate Interfaces

Fundamental Understanding of Enhanced Thermal Transport at Aligned Carbon Nanotube/Substrate Interfaces
对对齐碳纳米管/基底界面增强热传输的基本理解
批准号:
0800849
负责人:
Ching-Ping Wong
金额:
$25.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-06-01 至 2013-05-31

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中文摘要
翻译
PI建议使用一种新的CNT转移工艺,其特征在于通过焊料回流和/或化学共价键合进行原位开放式CNT合成和低温CNT组装的单独步骤,以设计用于微电子热管理的良好对准的开放式CNT架构。通过化学共价键合和水辅助的选择性蚀刻用于打开CNT两端原位生长过程中的粘附的基本机制将被研究。此外,PI将系统地研究CNT内壁的热传输特性,由于CNT独特的开放式结构,这些特性是可以访问的。此外,碳纳米管-金属和碳纳米管-硅结将被研究,以了解如何降低界面热阻。低温转移处理条件将被优化,用于在器件热管理中应用良好排列的开口端CNT。这项研究的结果将使我们能够控制定向碳纳米管的结构和性能。低温转移过程的优化是在实际器件级应用中利用CNT的关键步骤。研究结果将有助于碳纳米管作为电互连的发展。碳纳米管转移技术和碳纳米管-金属和碳纳米管-硅界面的热传输机制可以很容易地转移到微电子工业。这肯定会加速高性能和高功率电子设备的发展,并在美国保留许多高科技工作岗位。更广泛的影响还包括在大学预科、本科和研究生一级招募学生和提供咨询,特别是那些来自研究和教育活动中代表性不足群体的学生。PI将继续他的做法,提供资源,以大都会亚特兰大地区的重点是代表性不足的群体。
英文摘要
The PI proposes to use a novel CNT transfer process, which features separated steps of in-situ open-ended CNT synthesis and low-temperature CNT assembly by solder reflow and/or chemical covalent bonding to engineer well-aligned open-ended CNT architectures for microelectronic thermal management. The fundamental mechanisms of the adhesion via the chemical covalent bonding and the water-assisted selective etching used to open the CNT ends in-situ during growth will be studied. In addition, the PI will systematically study the thermal transport properties of the CNT internal walls which are accessible due to the unique open-ended structure of the CNTs. Moreover, the CNT-metal and CNT-silicon junctions will be studied to learn how to reduce the interface thermal resistance. The low-temperature transfer processing conditions will be optimized for the application of well-aligned open-ended CNTs in the device thermal management. The results of this research will enable us to control the aligned CNT structures and properties. The optimization of the low-temperature transfer process is a critical step toward taking advantage of the CNTs in actual device level applications. The results will contribute to the development of CNTs as electrical interconnects as well. The CNT transfer technology and thermal transport mechanisms at CNT-metal and CNT-silicon interfaces can be readily transferred to microelectronics industry. This will certainly speed up the advancement of high performance and high power electronic devices, and retain numerous high tech jobs in the US. The broader impacts also include the recruiting and advising of students at pre-college, undergraduate and graduate levels, especially those from the underrepresented groups in the research and education activities. The PI will continue his practice of providing resources to the metropolitan Atlanta area with an emphasis on underrepresented groups.
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