Integral Embedded Capacitor Component from Ultra-High Dielectric Constant Polymer-Conductive Filler Nano-Composite
超高介电常数聚合物-导电填料纳米复合材料的整体嵌入式电容器组件
基本信息
- 批准号:0203412
- 负责人:
- 金额:$ 24万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2002
- 资助国家:美国
- 起止时间:2002-07-01 至 2006-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Integral passives are considered to potentially provide alternatives to current discrete passive components with benefits on system cost, size, functionality and reliability. For embedded capacitor applications, polymer-ceramic nano-composite has been previously investigated as high dielectric constant (K) materials. However, there are some technical barriers to the use of polymer-ceramic composite in organic substrate, e.g., limited dielectric constant value (150) achieved and poor adhesion towards the substrates.The proposer has discovered a novel dielectric material, which is based on polymer-conductive filler composite. The preliminary results have shown an effective dielectric constant as high as over 2000, and nearly the same adhesion as the neat polymer matrix. In order to successfully apply such ultra-high K material to integral capacitor application in next-generation advanced electronic packaging, the proposed project will perform fundamental studies on the following issues:Ultra-high K polymer-conductive filler composite formulation optimization: Continued efforts will be devoted to optimize the formulation for potentially even higher material performance.Modeling of integral capacitor component: This could aid the design and process of integral capacitor components by providing quantitative estimates of the critical material and process parameters.Processability of integral capacitor component using the developed ultra-high K polymer-conductive filler composite: Prototyping of integral capacitor will be constructed from liquid or film composite material. Both rigid and flexible substrates will be used for capacitor development.Reliability performance of the integral capacitors fabricated from the proposed processes:stability/degradation of electrical properties such as dielectric constant as well as adhesion strength, etc. will be monitored against 850C185%RH aging, temperature, humidity and bias (THB) aging, liquid-liquid thermal shock (LLTC), and air-air thermal cycle (AATC), etc.Expected results from the proposed research will enrich the fundamental understanding about the integral capacitor component based on ultra-high K dielectric materials, which will be essential for the realization of integral capacitor application in next-generation micro-electronic packaging.
集成无源被认为是目前分立无源元件的潜在替代品,在系统成本、尺寸、功能和可靠性方面具有优势。对于嵌入式电容器的应用,聚合物-陶瓷纳米复合材料已经作为高介电常数(K)材料进行了研究。然而,在有机衬底中使用聚合物-陶瓷复合材料存在一些技术障碍,例如,达到的介电常数值有限(150)和对衬底的附着力差。提出了一种基于聚合物导电填料复合材料的新型介电材料。初步结果表明,该材料的有效介电常数高达2000以上,并具有与纯聚合物基体几乎相同的附着力。为了将这种超高K材料成功应用于下一代先进电子封装的集成电容器中,拟设项目将对以下问题进行基础研究:超高K聚合物导电填料复合材料配方优化:将继续努力优化配方,以获得更高的材料性能。整体电容组件的建模:这可以通过提供关键材料和工艺参数的定量估计来帮助整体电容组件的设计和工艺。利用所开发的超高K聚合物导电填料复合材料的积分电容器组件的可加工性:积分电容器的原型将由液体或薄膜复合材料构建。刚性和柔性基板都将用于电容器的开发。通过提出的工艺制造的整体电容器的可靠性性能:电性能的稳定性/退化,如介电常数以及粘附强度等,将在850C185%RH老化,温度,湿度和偏置(THB)老化,液-液热冲击(LLTC)和空气-空气热循环(AATC)下进行监测。本研究的预期结果将丰富人们对基于超高K介电材料的积分电容元件的基本认识,这对实现积分电容在下一代微电子封装中的应用至关重要。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Ching-Ping Wong其他文献
Mesoporous nitrogen-doped carbon MnO2 multichannel nanotubes with high performance for Li-ion batteries
用于锂离子电池的高性能介孔氮掺杂碳MnO2多通道纳米管
- DOI:
10.1016/j.nanoen.2022.107235 - 发表时间:
2022-04 - 期刊:
- 影响因子:17.6
- 作者:
Xunlong Yuan;Ziting Ma;Shuofeng Jian;Hui Ma;Yanan Lai;Shuolei Deng;Xiaocong Tian;Ching-Ping Wong;Fan Xia;Yifan Dong - 通讯作者:
Yifan Dong
Significantly enhanced dielectric and energy storage performance of blend polymer-based composites containing inorganic 3D–network
- DOI:
https://doi.org/10.1016/j.matdes.2018.01.009 - 发表时间:
- 期刊:
- 影响因子:
- 作者:
Zheng Zhang;Suibin Luo;Shuhui Yu;Zhishu Guan;Rong Sun;Ching-Ping Wong - 通讯作者:
Ching-Ping Wong
Ultra-small ZnS enhanced by Fe-N-C for advanced potassium-ion hybrid capacitors: Electronic transfer dynamics and ion adsorption capability
- DOI:
https://doi.org/10.1016/j.nanoen.2022.108065 - 发表时间:
2022 - 期刊:
- 影响因子:17.6
- 作者:
Shuolei Deng;Changgang Li;Wenhao Feng;Yaowen Cao;Xiaocong Tian;Huiting Bi;Shuang Zhou;Ching-Ping Wong;Yifan Dong - 通讯作者:
Yifan Dong
Elaborately fabricated polytetrafluoroethylene film exhibiting superior high-temperature energy storage performance
- DOI:
https://doi.org/10.1016/j.apmt.2020.100882 - 发表时间:
2020 - 期刊:
- 影响因子:8.3
- 作者:
Suibin Luo;Junyi Yu;Talha Qasim Ansari;Shuhui Yu;Pengpeng Xu;Liqiang Cao;Haitao Huang;Rong Sun;Ching-Ping Wong - 通讯作者:
Ching-Ping Wong
Laser Processing of Flexible In-Plane Micro-supercapacitors: Progresses in Advanced Manufacturing of Nanostructured Electrodes
- DOI:
10.1021/acsnano.2c02812 - 发表时间:
2022 - 期刊:
- 影响因子:17.1
- 作者:
Huilong Liu;Zhijian Sun;Yun Chen;Wenjun Zhang;Xin Chen;Ching-Ping Wong - 通讯作者:
Ching-Ping Wong
Ching-Ping Wong的其他文献
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{{ truncateString('Ching-Ping Wong', 18)}}的其他基金
Fundamental Study on the Etching Mechanics of Metal-Assisted Chemical Etching of Silicon for 2D and 3D Nanomanufacturing Applications
用于 2D 和 3D 纳米制造应用的金属辅助硅化学蚀刻的蚀刻机理的基础研究
- 批准号:
1130876 - 财政年份:2011
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
Fundamental Understanding of Enhanced Thermal Transport at Aligned Carbon Nanotube/Substrate Interfaces
对对齐碳纳米管/基底界面增强热传输的基本理解
- 批准号:
0800849 - 财政年份:2008
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
Fundamental Understanding of Nanofiller Dispersion in Polymer Systems for Electronics Applications
对电子应用聚合物系统中纳米填料分散的基本了解
- 批准号:
0621115 - 财政年份:2006
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
High Performance Embedded Passive Components Based on Novel Ultrahigh-K and Ultrahigh-Q Nanocomposites for Microelectronics Systems
用于微电子系统的基于新型超高 K 和超高 Q 纳米复合材料的高性能嵌入式无源元件
- 批准号:
0501405 - 财政年份:2005
- 资助金额:
$ 24万 - 项目类别:
Continuing Grant
Fundamental Understanding of Lotus Effect and Its Application in MEMS Stiction Prevention
莲花效应的基本认识及其在 MEMS 防粘连中的应用
- 批准号:
0422553 - 财政年份:2004
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
Fundamental Understanding of Anisotropic Conductive Film (ACF) for Flip Chip Packaging
对倒装芯片封装各向异性导电膜 (ACF) 的基本了解
- 批准号:
0217910 - 财政年份:2002
- 资助金额:
$ 24万 - 项目类别:
Standard Grant
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