Elimination of low-K interfacial transition regions on crystalline Ge, and on ultra thin Ge passivation layers on GaAs and InGaAs: a pathway to EOT scaling to 0.5 nm

来自：Gerry Lucovsky 2008年6月10日参考文献：Proposal 00823805 Short Abstract I)目标和方法：本研究的目的是通过减少GE介电界面的缺陷，并最大限度地减少限制等效氧化物厚度缩放的低K界面过渡区，为规模化Ge CMOS器件的优化提供科学基础。该方法包括优化湿化学预沉积清洗，在高K电介质沉积期间对Ge表面进行氮化钝化以防止皮下氧化，在后沉积退火期间监测埋入界面N的演变的先进光谱技术，以及比较界面和体缺陷的光谱和电学研究。Ii)智能优点：拟议的研究将通过开发没有自然Ge氧化物、氮化物和氧氮化物界面过渡区的器件质量的Ge-介质界面，将纳米CMOS器件扩展到11 nm 2022工艺节点。纳米级Hf Ge氧氮化物界面层的集成将通过消除硅衬底上的低K SiON界面层来减少可获得的EOT标度。内部阴极发光和椭圆偏振光谱加上同步加速器XAS和XPS将区分预先存在的、加工和应力引起的缺陷。探索性研究将评估化合物半导体衬底的类似方法。iii)更广泛的影响：该项目将扩大高中女性研究体验计划，将哥伦布地区高中的女性包括在内，包括在俄亥俄州立大学校园的暑期研究机会。在工程学院、工程女性项目和电气与计算机工程系的支持下，一个扩大的项目将包括当地高中初级理科教师，挑选积极性高、有才华的女性，并将她们与俄亥俄州立大学的工程学教师配对。类似的计划也将在NCSU实施。

From: Gerry Lucovsky10 June 2008Ref: Proposal 00823805Short Abstract i) Objective and Approach: The objectives of this research are to provide a science base for optimization of scaled Ge CMOS devices by reducing defects at Ge dielectric interfaces, and to minimize low-K interfacial transition regions that limit equivalent oxide thickness scaling. The approach includes optimization of wet chemical pre-deposition cleaning, nitride passivation of Ge surfaces to prevent subcutaneous oxidation during high-K dielectric depositions, advanced spectroscopic techniques to monitor evolution of N from buried interfaces during post deposition anneals, and spectroscopic and electrical studies comparing interfacial and bulk defects. ii) Intellectual Merit: The proposed research will extend nano-CMOS devices to the 11 nm 2022 processing node by developing device-quality Ge-dielectric interfaces without native Ge oxide, nitride and oxynitride interfacial transition regions. Integration of nano-scale Hf Ge oxynitride interfacial layers will reduce attainable EOT scaling by eliminating lower-K SiON interfacial layers on Si substrates. In-house cathodoluminescence and spectroscopic ellipsometry plus synchrotron XAS and XPS will distinguish between pre-existing, and processing and stress induced defects. Exploratory studies will evaluate a similar approach for compound semiconductor substrates.iii) Broader Impact: This project will expand the Research Experience for High School Women program to include women from Columbus area high schools, including summer research opportunities on the OSU campus. With support from the College of Engineering, the Women in Engineering Program, and the Department of Electrical & Computer Engineering, an expanded program will include local high school junior-level science teachers, selecting highly motivated and talented women and pairing them with OSU engineering faculty. Similar programs will be implemented at NCSU.