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GaN-based quantum-structure devices for THz light emission and photodetection

GaN-based quantum-structure devices for THz light emission and photodetection
用于太赫兹光发射和光电检测的基于 GaN 的量子结构器件
批准号:
0824116
负责人:
Roberto Paiella
金额:
$40.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-09-01 至 2012-08-31

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中文摘要
翻译
目的:太赫兹源和探测器的开发是广泛研究工作的主题,因为这些设备可以在传感,光谱学和成像领域实现许多高影响力的应用。基于GaAs的THz器件最近取得了实质性的进展;然而,由于GaAs的固有特性,即具有THz范围频率的LO声子的存在,它们只能提供不完全的光谱覆盖并且仍然限于低温温度。为了克服这些限制,PI建议开发子带间太赫兹源和光电探测器使用GaN/AlGaN量子威尔斯,其功能LO声子频率以及以外的THz区域。智力优点:使用氮化物量子威尔斯太赫兹器件的发展的论点是非常引人注目的,并已被详细的理论研究所证实。研究目标将通过材料开发工作、基于蒙特卡罗的设计研究和器件加工优化相结合来实现,并且所有所需的资源和专业知识都可用。更广泛的影响:拟议的活动将通过对学生进行外延生长、量子工程、计算电子学和太赫兹光子学等各种学科的培训,促进教育。为了提高计划的有效性和范围,还强调了本科生,高中实习生和来自弱势背景的学生的参与。最后,所提出的设备有可能在几个高度相关的技术领域产生革命性的影响,例如安全检查,制造质量控制和医疗诊断。
英文摘要
Objectives: The development of terahertz sources and detectors is the subject of extensive research efforts, as these devices could enable numerous high-impact applications in the areas of sensing, spectroscopy, and imaging. GaAs-based THz devices have made substantial progress recently; however they can only provide incomplete spectral coverage and remain limited to cryogenic temperatures due to an intrinsic property of GaAs, namely the presence of LO phonons with THz-range frequencies. To overcome these limitations, the PIs propose to develop intersubband THz sources and photodetectors using GaN/AlGaN quantum wells, which feature LO-phonon frequencies well outside of the THz region.Intellectual merit: The argument of using nitride quantum wells for THz device development is very compelling and has been substantiated by detailed theoretical studies. The research objectives will be pursued with a combination of material development efforts, Monte Carlobased design studies, and device processing optimization, and all the required resources and expertise are available. This work will also advance the general state of knowledge in the area of nitride heterostructures and related devices.Broader impacts: The proposed activities will promote education through the training of students in a variety of disciplines, ranging from epitaxial growth, to quantum engineering, computational electronics, and THz photonics. To increase the program effectiveness and scope, the involvement of undergraduates, high-school interns, and students from disadvantaged backgrounds is also emphasized. Finally, the proposed devices have the potential for a revolutionary impact in several technology areas of high relevance, such as security screening,manufacturing quality control, and medical diagnostics.
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