SGER: Exploring the Electron and Lattice Dynamics during Ultrafast Laser P-Type-Doping of ZnO

氧化锌（ZnO）是一种宽带隙半导体，最近作为蓝光至近紫外光谱区域的光电器件的选择材料而受到欢迎。 其特性和无毒性使其成为光子应用的理想材料。 为了使半导体在大多数应用中有用，必须向主要材料中添加附加元素，即掺杂半导体。 这使得ZnO无法广泛应用于器件中，尽管它具有所有的优点，因为没有可靠和可重复的方法来获得高度p掺杂的ZnO。 这项探索性研究的小额资助旨在揭示生产p掺杂ZnO所涉及的电子和晶格的动力学。 在研究超快掺杂背后的物理学的同时，该项目将探索使用超短激光脉冲来生产高度掺杂的宽带隙半导体，如p型掺杂ZnO。 该项目将为研究生提供多学科技能。探索性研究的小额资助将研究半导体材料在超快激光照射下与掺杂剂相互作用时的基本电子和晶格性质。 这些测量将揭示有关激发的载流子数量、材料吸收多余能量的弛豫机制以及晶格结合和容纳掺杂剂的时间尺度的信息。 对超快激光掺杂过程中的电子和晶格动力学的基本理解对于高掺杂半导体的进一步研究至关重要。 在研究超快掺杂背后的物理学的同时，该项目将探索使用超短激光脉冲来生产高度掺杂的宽带隙半导体，如p型掺杂ZnO。 该项目将为研究生提供多学科技能。

Zinc Oxide (ZnO) is a wide-bandgap semiconductor that has recently seen a resurgence of popularity as a choice material for optoelectronic devices in the blue-to-near-ultraviolet region of the spectrum. Its properties and non-toxicity make it an ideal material for photonic applications. For semiconductors to be useful in most applications it is necessary to add an additional element to the main material, i.e. to dope the semiconductor. This has kept ZnO from being widely used in devices, despite all of its advantages, because there is no reliable and reproducible way to obtain highly p-doped ZnO. This Small Grant for Exploratory Research aims to reveal the dynamics of the electrons and lattice involved in producing p-doped ZnO. Simultaneously with investigating the physics behind ultrafast doping, this project will explore the use of ultrashort laser pulses to produce a highly doped wide-bandgap semiconductor such as p-doped ZnO. The project will provide a graduate student with multidisciplinary skills.This Small Grant for Exploratory Research will investigate the fundamental electronic and lattice properties of a semiconductor as the material interacts with dopants under ultrafast laser irradiation. The measurements will reveal information about the numbers of carriers excited, the relaxation mechanisms by which the material absorbs excess energy, and the timescales in which the lattice incorporates and accommodates dopants. A fundamental understanding of the electronic and lattice dynamics during ultrafast laser doping is critical for further research on highly doped semiconductors. Simultaneously with investigating the physics behind ultrafast doping, this project will explore the use of ultrashort laser pulses to produce a highly doped wide-bandgap semiconductor such as p-doped ZnO. The project will provide a graduate student with multidisciplinary skills.