课题基金 / 基金详情

GOALI: 3D III-V Green transistors with ultra-steep subtreshold slope

GOALI: 3D III-V Green transistors with ultra-steep subtreshold slope
GOALI:具有超陡亚阈值斜率的 3D III-V 绿色晶体管
批准号:
0901699
负责人:
Harlan Harris
金额:
$33.19万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-09-15 至 2012-08-31

项目摘要

项目成果

Harlan Harris的其他基金

相似基金

相关文献

中文摘要
翻译
该奖项是根据2009年《美国复苏和再投资法案》(公法111-5)资助的。本研究的目的是设计和构建一种自对准的隧道逻辑器件,在关断状态下消耗更少的功率,并且在器件开启时需要更少的开关功率。该方法将使用模拟来确定合适的带工程异质结构,利用金属有机化学气相沉积来实现异质结构,开发制造3D器件所需的蚀刻和间隔物技术,并制造用于物理和电学表征的器件。这项工作在使用3D III-V结构和利用自对准工艺来制造复杂的3D器件方面具有创新性。智力价值世界所消耗的能量?S处于被动状态的电子器件惊人地多。这项工作中实施的新概念将导致被动能源消耗减少几个数量级,使其成为一种绿色?晶体管以其节能的特性。因此,这项研究无论在本质上还是在潜在的环境影响上都具有变革性。广泛的影响这项工作最重要的广泛影响是这种无源功率器件的引入可以实现能源节约。此外,这个项目还将支持少年派暑期的努力?太冷了,不适合上学?旨在帮助那些来自同龄人的压力使他们远离科学教育的聪明孩子的外展计划。通过向聪明的后进生展示纳米技术的凉爽因素,PI希望能改变他们对学术成就文化的看法。
英文摘要
" This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5)." The objective of this research is to design and construct a self-aligned tunnel logic device will consume less power in the off-state and require less switching power for device turn-on. The approach will be to use simulations to determine the appropriate band-engineered heterostructures, implement the heterostructures with metallorganic chemical vapor deposition, develop the etching and spacer techniques needed to fabricate the 3D device, and to fabricate the devices for physical and electrical characterization. This work is innovative in the use of 3D III-V structures and utilization of self-aligned processes to fabricate the complex 3D device.Intellectual MeritThe amount of energy used by the world?s electronic devices in the passive state is staggeringly excessive. The novel concepts implemented in this work will result in a reduction of passive energy consumption by several orders of magnitude making it a ?green? transistor for its energy saving nature. Thus this research is transformative both in its divergent nature from CMOS and in its potential environmental impact.Broader ImpactThe most significant broad impact of this work is in the energy savings that can be realized by the introduction of this passive power device. In addition, this project will also support the PI summer effort in a ?Too Cool for School? outreach program designed to reach those intelligent kids whose peer-pressure culture has turned them away from science education. By demonstrating to intelligent underachievers the cool-factors of nanotechnology, the PI hopes to sway them toward the culture of academic achievement.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Collaborative Research: Vertical GaN Nanostructures on Silicon Fins for Power Electronics and Future Integration with Silicon Technology
国内基金
海外基金
面向组织工程宏/微血管化的流道/多孔耦合生物 3D 打印研究
  • 批准号:
    ZCLZ26C1001
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2026
  • 负责人:
    邵磊
  • 依托单位:
高速喷气织机非标部件3D打印技术研究
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2026
  • 负责人:
    陈雨莹
  • 依托单位:
船舶海工用粘结剂喷射3D打印金属复合材料成形技术开发
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2026
  • 负责人:
    徐龙
  • 依托单位:
高效换热不锈钢模具3D打印关键技术及装备开发
  • 批准号:
  • 项目类别:
    省市级项目
  • 资助金额:
    --
  • 批准年份:
    2026
  • 负责人:
    刘双宇
  • 依托单位: