Collaborative Resarch: Materials World Network: III-V Bismide Materials for IR and Mid IR Semiconductors

这个材料世界网络项目，涉及来自美国亚利桑那州州立大学和密歇根大学，加拿大维多利亚大学和西蒙弗雷泽大学，英国萨里大学和德国菲利普斯大学的研究人员，并专注于一个相对未开发的III-V族半导体合金家族，其中含有最重的自然存在的V族元素铋。 铋是无毒的，相对便宜，是周期表中最重的非放射性元素。 此外，与传统的半导体合金相比，Bi合金具有非常大的自旋轨道分裂和较小的带隙温度依赖性。 这项国际合作的研究目标是在理论和实验上开发用于IR和中IR光电器件以及其他小带隙器件的III-V族双酰亚胺化合物半导体，其晶格常数为GaAs，InP，InAs和GaSb。研究活动包括III-V族双酰亚胺材料的分子束外延生长;旨在了解掺杂剂掺入、带隙能量、带偏移、材料性能和这些材料及相关器件的辐射效率的结构表征和性能测量;并对Bi-Si量子阱结构和光学器件的电学和光学性质进行了理论分析。含有化合物半导体。理论和设备级研究将主要由海外科学家进行。该项目的联网目标是通过主办两个国际研讨会，一个是2010年夏天在密歇根大学，另一个是2011年夏天在萨里大学，将材料世界网络与更大的全球科学研究界联系起来，并通过开发网络基础设施来加强铋合金研究人员和更广泛的科学界之间的数据共享和分析。这些活动将促进样本交流和工具共享，以开发III-V族二酰亚胺材料，通过更广泛的传播、理解和学生与研究人员之间的面对面互动来加强科学和技术，并促进数据共享和信息交流，这很可能会激发进一步的创新，并改变数据管理和应对材料挑战的方式。

This Materials World Network project, involves investigators from Arizona State University and the University of Michigan in the US, the University of Victoria and Simon Fraser University in Canada, the University of Surrey in the UK, and Philipps-Universität in Germany, and focuses on a relatively unexplored family of III-V semiconductor alloys containing the heaviest naturally occurring group V element, bismuth. Bismuth is non-toxic, relatively inexpensive, and the heaviest non-radioactive element in the periodic table. Furthermore, Bi-alloys have a very large spin orbit splitting and a smaller temperature dependence of the bandgap when compared with conventional semiconductor alloys. The research objective of this international collaboration is to theoretically and experimentally develop study III-V bismide compound semiconductors for IR and mid IR optoelectronic devices and other small bandgap devices at the readily available lattice constants of GaAs, InP, InAs, and GaSb. The research activities include molecular beam epitaxy growth of III-V bismide materials; structural characterization and property measurements aimed at developing an understanding of dopant incorporation, bandgap energy, band offsets, materials performance, and radiative efficiency of these materials and related devices; and theoretical analysis of the electronic and optical properties of quantum-well structures and optical devices based on Bi-containing compound semiconductors. The theoretical and device-level research will be performed mainly by the overseas scientists. The networking objective of this project is to link this Materials World Network with the larger global scientific research community by hosting two international workshops, one at the University of Michigan during the summer of 2010 and one at the University of Surrey during the summer of 2011, and by developing cyberinfrastructure to enhance data sharing and analysis between Bi-alloy investigators and the broader scientific community. These activities, promote sample exchange and tool sharing for the development of III-V bismide materials, enhance science and technology through broader dissemination, understanding, and face-to-face interactions between students and researchers, and advance data sharing and information exchange, which may well inspire further innovation and change the way data is managed and material challenges are addressed.