SBIR Phase I: Ultra Low Power InAsN Semiconductor Transistors

这个小型企业创新研究(SBIR)第一阶段项目将展示新的III-V氮化物半导体合金和双极晶体管结构的可行性，具有在需要射频和数字电子设备的应用中实现超低功率器件操作的潜力。提高能效一直是便携式和高性能电子设备的主要问题，在硅或砷化镓衬底上使用特殊设计的薄膜器件结构可以在从微处理器到无线电子的各种应用中产生巨大影响。这项提议将开发和商业化超低功率氮基半导体晶体管，这将对高性能个人通信电子领域的功耗产生重大影响。超低电压晶体管为实现超低功率电子器件的运行提供了一个令人兴奋的机会。因此，所提出的设备实施例在需要高性能同时最小化功耗的下一代便携式和无线技术中具有巨大的应用潜力。本课程将从器件设计、材料合成和材料测试开始，以器件的p-n结原理验证和晶体管动作演示结束。这个项目的更广泛的影响/商业潜力将允许新一代晶体管在降低功耗方面比现有的硅基和砷化镓器件具有优势？因此，这一新的晶体管实例可能会影响整个电子行业。该项目的潜在社会影响以及最重要的商业影响将使下一代便携式、无线、移动互联网和辅助技术设备的开发变得更加实用，因为它们需要显著较低的开启电压，以便在保持更长时间运行的同时将功耗降至最低。市场领域将包括芯片制造商、老龄化人口、移动电子用户、军事和需要降低功耗放大器的便携式电子制造商。这项低压晶体管的创新将加强对超小能带隙材料的基本材料物理的科学和技术理解，这种材料可以用于许多其他应用，如长波探测器和激光。

This Small Business Innovation Research (SBIR) Phase I project will demonstrate the viability of a new III-V nitride semiconductor alloy and bipolar transistor structure with the potential to enable ultra low power device operation in applications requiring both RF and digital electronics. Increasing power efficiency has been a major issue for portable and high performance electronic devices and the use of specially designed thin-film device structures on silicon or GaAs substrates can make a huge impact in applications ranging from microprocessors to wireless electronics. This proposal will develop and commercialize ultra low power nitrogen-based semiconductor transistors that will have a large impact on power consumption in the realm of high-performance personal communication electronics. The ultra-low voltage transistors offer an exciting opportunity to achieve ultra low power electronic device operation. Thus, the proposed device embodiment has enormous potential for applications in next generation portable and wireless technology requiring high performance while minimizing power consumption. This program will begin with device design, material synthesis and materials testing and end with proof-of-principle p-n junctions and transistor action demonstrations of our device. The broader impact/commercial potential of this project will allow a new generation of transistors which have advantages over existing silicon-based and GaAs-based devices with regard to reduced power consumption ? thus this new transistor embodiment could impact the entire electronics industry. The potential societal and most importantly the commercial impact of the project will allow the development of the next generation portable, wireless, mobile internet and assistive technology devices to become ever more functional since they will require significantly lower turn-on voltages so as to minimize power consumption while sustaining operation over longer periods of time. The market sector would include the chip manufacturers, aging population, mobile electronics users, the military, and portable electronic manufactures that require reduced power consumption amplifiers. This low voltage transistor innovation will enhance scientific and technological understanding of the basic material physics of ultra small energy bandgap materials which can be used in many other applications as long wavelength detectors and lasers.