EAGER: Novel Tunnel Barriers and Electrodes for Advanced Magnetic Tunnel Junctions Suitable for Spin Torque Transfer Magnetic Random Access Memory

ECCS/PCAN/EAGER：用于先进磁隧道结的新型隧道势垒和电极适用于自旋力矩转移磁随机存取存储器主要研究者：StuartA。Wolf，University of Atlantic项目概要：该项目的重点是开发新型的隧道势垒和磁性隧道结电极，这些隧道结将用于一种新型的磁存储器，称为自旋力矩转移随机存取存储器或STT-RAM。尽管全世界都在争相开发这种新的存储器技术，但仍有一些根本性的挑战需要克服。特别是，寻找材料，使结切换与低电流，也有很长一段时间的热稳定性，这EAGER建议的目标是非常迅速地证明新的解决方案，这些挑战，并提供了一个快速的路径，以加速发展这项技术公正的新切换没有更传统的磁性随机存储器或MRAM，最近已商业化。一个非常独特的方法是设计来解决这个问题的基础上开发新的氧化物，具有示范性的属性，使隧道结利用这些材料，以满足非常低的功率开关和出色的热稳定性（10年的数据保留）的要求。在这个项目中，探索有三条路径可以产生强大的和可扩展的STT-RAM：（1）新的隧道势垒;（2）更好的铁磁电极;（3）新材料与垂直磁化。智力优点：这个建议涉及新的氧化物和其他材料和结构的发展，是高度复杂的，并显示出强的电子相关性和emergentbehavior。了解这些材料及其涌现的行为有一个明确的智力回报，不仅仅是革命性的STT-RAM的最先进的状态。此外，这些材料正在准备使用新的沉积方法：偏压靶反应离子束沉积和脉冲电子束沉积，提供了前所未有的控制高度有序和光滑的超薄膜的生长。使用这些独特的工具开发这些薄膜的演示，使快速探索广泛的组成空间和评估新的性能，为一系列重要的研究和技术挑战提供了解决方案。该项目具有很高的学术价值，除了转化技术解决方案外，还将提供一系列有趣的出版物。更广泛的影响：如果成功，该项目的成果将立即纳入新一代随机存取非易失性存储器，原则上可以成为取代SRAM，DRAM和FLASH的通用存储器。UVA？无论是大公司还是主要的创业公司，都参与了半导体行业，几乎可以保证任何突破都会很快被采用。固态存储器行业拥有超过1000亿美元的市场。

ECCS/PCAN/EAGER: Novel Tunnel Barriers and Electrodes for Advanced Magnetic Tunnel JunctionsSuitable for Spin Torque Transfer Magnetic Random Access MemoryPrinciple investigator: Stuart A. Wolf, University of VirginiaProject Summary:This project is focused on the development of novel tunnel barriers and electrodes formagnetic tunnel junctions that will be utilized in a new type of magnetic memory calledSpin Torque Transfer Random Access Memory or STT-RAM. Although there is aworldwide rush to develop this new memory technology, there are some fundamentalchallenges that need to be overcome. In particular, finding materials that allow thejunction to be switched with low currents and also have very long term thermal stability.The goal of this EAGER proposal is to very quickly demonstrate novel solutions to thesechallenges and provide a rapid path to accelerate the development of this technology justas the novel toggle switching did for the more conventional Magnetic Random AccessMemory or MRAM that has been recently commercialized. A very unique approach isdesigned to solve this problem based on developing novel oxides that have exemplaryproperties that will enable tunnel junctions utilizing these materials to satisfy therequirements of very low power switching and excellent thermal stability (10 yearretention of data). In this project the exploration has three paths that could produce arobust and scalable STT-RAM: (1) new tunnel barriers; (2) better ferromagneticelectrodes; (3) new material with perpendicular magnetization.Intellectual Merit:This proposal addresses the development of novel oxide and other materials andstructures that are highly complex and show strong electronic correlations and emergentbehavior. Understanding these materials and their emergent behavior has a clearintellectual payoff beyond just revolutionizing the STT-RAM state of the art.Furthermore, these materials are being prepared using new deposition methods: BiasedTarget Reactive Ion Beam Deposition and Pulsed Electron Beam Deposition that provideunprecedented control of the growth of highly ordered and smooth ultra thin films. Thedemonstration of the development of these films using these unique tools that enablerapid exploration of broad composition space and evaluation of novel properties providessolutions to a set of important research and technological challenges. This project has ahigh degree of Intellectual Merit and will provide a series of interesting publications inaddition to translational technological solutions.Broader Impacts:If successful, the results of this project will be immediately incorporated into this newgeneration of random access, non-volatile memory which can, in principle be a Universalmemory that replaces SRAM, DRAM and FLASH. UVa?s participation with theSemiconductor Industry both the large companies as well as a major startup companyalmost guarantees that any breakthroughs will be quickly adopted. The solid statememory industry has a market of over $100 Billion.