MRI-R2: Development of a System for Real-Time X-Ray Scattering Analysis of Complex Oxide Thin Film Growth
MRI-R2: Development of a System for Real-Time X-Ray Scattering Analysis of Complex Oxide Thin Film Growth
批准号:
0959486
负责人:
Randall Headrick
金额:
$28.72万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-03-01 至 2013-02-28
中文摘要
0959486HeadrickU。佛蒙特州州立农业学院技术概述:该奖项是根据2009年《美国复苏和再投资法案》(公法111-5)资助的。X射线散射是研究材料的一个非常强大的工具,因为它能够监测长度尺度,精确到原子尺寸,并具有到达地下界面和结构的穿透力。基于同步加速器的X射线技术还提供了时间分辨率,以研究与基本表面过程和获取化学信息相关的时间尺度上的薄膜晶体生长。该项目旨在构建一种独特的薄膜生长系统,优化用于复杂功能氧化物材料的外延生长。该系统将与国家同步加速器光源(NSLS)光束线X21的现有基础设施兼容,在那里它将用于对脉冲激光沉积或溅射沉积薄膜生长过程中的表面粗糙和平滑、应变、相分离、表面/界面结构以及与外延薄膜生长动力学有关的其他现象进行原位X射线散射研究。来自波士顿大学、石溪大学、佛蒙特州大学和布鲁克海文国家实验室等机构财团的研究团队将建造和支持该设施。这些小组带来了各种氧化物材料方面的专业知识,包括表现出铁电、铁磁或反铁磁有序的材料,以及在固体氧化物燃料电池中应用的材料。拟议的仪器为学生提供了一种令人兴奋的可能性,可以向一群在用先进方法表征材料方面拥有丰富专业知识的科学家学习。NSLS的普通用户也将可以使用该设施,这将确保利用该系统进行重点突出的高质量研究,同时向国际科学家人才库提供准入和支持。外行人摘要:该奖项是根据2009年《美国复苏和再投资法案》(公法111-5)资助的。X射线是研究材料的一种非常强大的工具:由于X射线波长短,可以用来测量低至原子维度的结构;由于X射线不被强烈吸收,X射线可以到达材料内部。同步加速器是科学家经常可以获得的最明亮的X射线源,它允许在生长表面发生的原子过程的时间尺度或附近的时间尺度上对薄膜晶体生长进行时间分辨研究。该项目旨在构建一种独特的薄膜生长系统,该系统针对在电子和能源设备中具有潜在应用的复合氧化物薄膜的晶体生长进行了优化。该系统将与国家同步加速器光源(NSLS)的现有基础设施兼容,在那里它将用于进行表面粗糙和平滑、应变、相分离、表面/界面结构以及与薄膜生长过程中的其他现象有关的X射线散射研究,这些现象与薄膜生长过程中由激光脉冲产生的原子羽流或目标材料的高能离子侵蚀有关。来自波士顿大学、石溪大学、佛蒙特州大学和布鲁克海文国家实验室等机构财团的研究团队将建造和支持该设施。这些小组带来了各种氧化物材料方面的专业知识,包括未来表现出铁电、铁磁或反铁磁有序的电子器件材料,以及在固体氧化物燃料电池中的应用材料。拟议的仪器为学生提供了一种令人兴奋的可能性,可以向一群在用先进方法表征材料方面拥有丰富专业知识的科学家学习。NSLS的普通用户也将可以使用该设施,这将确保利用该系统进行重点突出的高质量研究,同时向国际科学家人才库提供准入和支持。
英文摘要
0959486HeadrickU. of Vermont & State Agricultural CollegeTechnical Summary: This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). X-ray scattering is an enormously powerful tool for the study of materials because of the ability to monitor length scales down to atomic dimensions and penetrating power to reach buried interfaces and structures. Synchrotron-based x-ray techniques also provide time resolution to study thin film crystal growth on time scales relevant to the fundamental surface processes and access to chemical information. This project aims to construct a unique thin-film growth system optimized for epitaxial growth of complex functional oxide materials. The system will be compatible with the existing infrastructure at the National Synchrotron Light Source (NSLS) beamline X21, where it will be used to perform in-situ x-ray scattering studies of surface roughening and smoothening, strain, phase separation, surface/interface structure, and other phenomena related to epitaxial film growth kinetics during film growth by Pulsed Laser Deposition or by Sputter Deposition. Research teams from a consortium of institutions, including Boston University, Stony Brook University, the University of Vermont, and Brookhaven National Laboratory will construct and support the facility. These groups bring to bear expertise in a wide variety of oxide materials, including materials that exhibit ferroelectric, ferromagnetic, or antiferromagnetic ordering, and materials with applications in Solid Oxide Fuel Cells. The proposed instrumentation represents an exciting possibility for students to learn from a diverse group of scientists having tremendous expertise in characterization of materials by advanced methods. General users of the NSLS will also have access to the facility, which will ensure that focused high quality research will be performed with the system, while at the same time providing access and support to an international pool of scientists. Layman Summary: This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). X-rays are an enormously powerful tool for the study of materials: they can be used to measure structures down to atomic dimensions using diffraction because of their short wavelength, and they can reach inside of materials because they are not strongly absorbed. Synchrotrons are the brightest sources of x-rays routinely available to scientists, which allows time resolved studies of thin film crystal growth on the time scales at or near the time scales of atomic processes taking place on the growth surface. This project aims to construct a unique thin-film growth system optimized for crystal growth of complex oxide thin films that have potential applications in electronics and energy devices. The system will be compatible with the existing infrastructure at the National Synchrotron Light Source (NSLS), where it will be used to perform x-ray scattering studies of surface roughening and smoothening, strain, phase separation, surface/interface structure, and other phenomena related to thin film crystal growth during film growth from plumes of atoms created by laser pulses or by energetic ion erosion of a target material. Research teams from a consortium of institutions, including Boston University, Stony Brook University, the University of Vermont, and Brookhaven National Laboratory will construct and support the facility. These groups bring to bear expertise in a wide variety of oxide materials, including materials for future electronic devices that exhibit ferroelectric, ferromagnetic, or antiferromagnetic ordering, and materials with applications in Solid Oxide Fuel Cells. The proposed instrumentation represents an exciting possibility for students to learn from a diverse group of scientists having tremendous expertise in characterization of materials by advanced methods. General users of the NSLS will also have access to the facility, which will ensure that focused high quality research will be performed with the system, while at the same time providing access and support to an international pool of scientists.
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In-situ X-ray Scattering Studies of Oxide Epitaxial Growth Kinetics and Dynamics
-
批准号:2336506
-
项目类别:Continuing Grant
-
资助金额:$73.54万
-
财政年份:2024
-
负责人:Randall Headrick
-
依托单位:
PFI-RP: Scalable Fabrication of Flexible Electronics and Solar Cells with Improved Environmental Stability
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批准号:1918723
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项目类别:Standard Grant
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资助金额:$54.72万
-
财政年份:2019
-
负责人:Randall Headrick
-
依托单位:
In-situ and Operando Studies of Metastable and Transient States of Organic Semiconductor Thin Films
-
批准号:1701774
-
项目类别:Standard Grant
-
资助金额:$42.0万
-
财政年份:2017
-
负责人:Randall Headrick
-
依托单位:
Real-time X-ray Scattering Studies of Oxide Epitaxial Growth
-
批准号:1506930
-
项目类别:Standard Grant
-
资助金额:$48.0万
-
财政年份:2015
-
负责人:Randall Headrick
-
依托单位:
Real-Time Studies of Solution-Processed Organic Semiconductor Thin Films
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批准号:1307017
-
项目类别:Continuing Grant
-
资助金额:$37.19万
-
财政年份:2013
-
负责人:Randall Headrick
-
依托单位:
MRI: Development of a System for Thin Film Deposition of Highly Ordered Organic Materials.
-
批准号:0722451
-
项目类别:Standard Grant
-
资助金额:$18.85万
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财政年份:2007
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负责人:Randall Headrick
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依托单位:
CAREER: X-Ray Diffraction Studies of Semiconductor and Metal Thin Film Growth
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批准号:0348354
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项目类别:Continuing Grant
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资助金额:$0.0万
-
财政年份:2004
-
负责人:Randall Headrick
-
依托单位:
Development of a System for Time-resolved Studies of Film Growth and Processing and Student Training
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批准号:0216704
-
项目类别:Continuing Grant
-
资助金额:$14.0万
-
财政年份:2002
-
负责人:Randall Headrick
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依托单位:
REG: Semiconductor Thin Film Growth/X-Ray Diffraction System
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批准号:9411668
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项目类别:Standard Grant
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资助金额:$5.34万
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财政年份:1994
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负责人:Randall Headrick
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依托单位:
国内基金
海外基金
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