REG: Semiconductor Thin Film Growth/X-Ray Diffraction System

REG：半导体薄膜生长/X 射线衍射系统

• 批准号: 9411668
• 负责人: Randall Headrick
• 金额: $ 5.34万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-08-01 至 1995-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9411668&HistoricalAwards=false
• 关键词: REG; Semiconductor; Thin; Film; Growth

9411668 Headrick The Cornell High Energy Synchrotron Source(CHESS) and the School of Engineering and Applied Physics and Cornell University will construct a Semiconductor Thin Film Growth/X-ray Diffraction System dedicated to support research in thin film microstructures. Specifically, this equipment will support several new and existing research programs studying the growth o thin films of wide bandgap III-V materials using Gas Source Molecular Beam Epitaxy (GSMBE), Atomic Layer Epitaxy (ALE), and other new proposed growth techniques using ion, radical and molecular sources. By utilizing the high intensity x-ray bams available and CHESS, this system will be able to perform time resolved measurements of the structure of semiconductor thin films during growth. This research studying time-dependent effects is expected to yield critical insight in the development of advanced growth techniques and new microscopically structured materials. Such structures are needed for electronic devices, optoelectronic devices, optical storage media, protective coatings and UV-transmitting windows based on the III-V nitrides, i.e. AIN, GaN and InN. ***

9411668 Headrick康奈尔高能同步加速器源（CHESS）和工程与应用物理学院以及康奈尔大学将建造一个半导体薄膜生长/X射线衍射系统，致力于支持薄膜微结构的研究。 具体而言，该设备将支持几个新的和现有的研究计划，研究使用气体源分子束外延（GSMBE），原子层外延（ALE）和其他新提出的使用离子，自由基和分子源的生长技术的宽带隙III-V材料薄膜的生长。 该系统利用现有的高强度X射线束和CHESS，能够对半导体薄膜生长过程中的结构进行时间分辨测量。 这项研究的时间依赖性的影响，预计将在先进的生长技术和新的微观结构材料的发展产生关键的洞察力。 基于III-V族氮化物（即AlN、GaN和InN）的电子器件、光电子器件、光存储介质、保护涂层和UV透射窗口需要这样的结构。 ***