SBIR Phase IB: High quality AlGaN layers by fast growth rate MEMOCVD

这个小型企业创新研究项目将开发一种创新的方法，用于低错位密度的高质量厚（Al）（In）（Ga）N层的外延沉积。这项工作的完成将为下一代UV LED结构提供技术，目前需要改进具有低密度螺纹位错和点缺陷的厚层和掺杂AlGaN层的生长。（Al）（In）（Ga）N基深紫外led代表了一种新型的紧凑且环境稳定的半导体紫外光源。深紫外led穿透现有市场，需要紧凑，坚固耐用和环保的紫外线辐射源。这种创新技术的定位是创造新的应用，以前由于现有的紫外线灯或激光器的固有限制而无法实现。主要市场包括水/空气消毒、生物医学和分析仪器、荧光传感、油墨固化和光疗。

This Small Business Innovation Research Project will develop an innovative approach for epitaxial deposition of high quality thick (Al)(In)(Ga)N layers with low dislocation density. Accomplishment of the proposed effort will provide technology for next generation UV LED structures, which currently require improvements in growth of thick and doped AlGaN layers with low density of threading dislocations and point defects. (Al)(In)(Ga)N based deep UV LEDs represent a new class of compact and environmentally stable semiconductor UV light sources. Deep UV LEDs penetrate existing markets that require compact, rugged and environmentally friendly UV radiation sources. This innovative technology is positioned to create new applications that were previously unattainable due to the inherent limitations of existing UV lamps or lasers. Primary markets include water/air disinfection, bio-medical and analytical instrumentation, fluorescence sensing, ink curing, and phototherapy.