CSR: Medium: Computing via Monolithic Three Dimensional Assembly of Novel Floating Gate Transistors and Thin Film Semiconductors

能量比例和低功率计算，以及对随机故障的高弹性的日益增长的需求，都可以极大地受益于“统一存储器”--一种存储单元，作为动态单元或非易失性单元运行，并在两种状态之间无缝切换。这项工作的重点是基于双浮动栅极概念的这种单元的开发。栅极堆叠被优化为低电压操作。由于动态存储模式依赖于直接隧穿，所需电场适中，并且使用ALD方法来构建坚固的氧化物，因此该器件在动态存储模式下工作时具有高耐久性的潜力。与DRAM单元相比，该器件具有相对较低的泄漏，因此需要较少的频繁刷新。读取速度很快--几乎是SRAM速度--而且是非破坏性的，降低了电力需求。动态和非易失性模式之间的转换非常快--一次转换一整行，并且比连接到固态驱动器消耗的电能少得多。该设备可以同时存储一个非易失性位和一个不同的易失性位，从而实现快速的就地检查点和回滚或状态保存，以提高错误恢复能力。

Energy-proportional and low power computing, together with the increasing demands for high resiliency to random faults could benefit enormously from a "Unified Memory" - a memory cell that operate either as a dynamic cell or as a non-volatile cell, and switch seamlessly between the two states. This effort focuses on the development of such a cell based on a dual floating gate concept. The gate stack is optimized to low voltage operation. Because the dynamic storage mode relies on direct tunneling, the electric fields required are modest, and ALD methods are used to construct robust oxides, this device has potential for high endurance when operating in the dynamic storage mode. The device has a relatively low leakage compared to a DRAM cell and thus needs less frequent refreshing. The read is fast - almost SRAM speeds - and non-destructive, reducing power needs. Conversion between dynamic and non-volatiles modes is very fast - an entire row at a time, and consumes a lot less power than interfacing to a solid-state drive. The device can simultaneously store a non-volatile bit with a different volatile bit enabling fast in-situ check-pointing and rollback or state-saving to improve error resiliency.