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Nonlinear Photonic Crystal Nanocavities and Waveguides

Nonlinear Photonic Crystal Nanocavities and Waveguides
非线性光子晶体纳米腔和波导
批准号:
1101341
负责人:
Galina Khitrova
金额:
$32.58万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-06-01 至 2014-05-31

项目摘要

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中文摘要
翻译
目标。评估磷基mbe生长层和量子点在单量子点和光子晶体板纳米腔之间的量子极限强耦合(芯片上的固态纠缠)的有效性。知识价值。继2004年图森的强耦合演示之后,世界范围内在提高真空拉比分裂与线宽之比方面的进展令人失望地缓慢,这是开关和量子信息实际应用所需要的。由于线宽的限制是空腔Q,据报道,GaAs板/ gainp牺牲层空腔的值高达700,000,而GaAs/AlGaAs通常为30,000,这促使该项目优化p基层和点的生长,以实现强耦合。成功将改变整个半导体腔QED领域。大部分p基的增长都是通过MOCVD(显然适合电子和激光)实现的,但表面过于粗糙,无法制造高q空腔。这个项目将首先为空的高q空腔生长平面层,然后在板的中心生长点。更广泛的影响。成功的主要影响将是更强大的半导体量子器件,更不容易受到低q腔中光子逃逸引起的失相的影响。这将使该器件在单光子开关和分离腔内部状态之间的量子态转移方面更加有用。培养研究生在量子光学和所需的低温和光谱学实验技能是另一个重要的影响。指导RET教师和REU学生有助于吸引聪明的学生从事科学和工程职业。
英文摘要
Objective. Evaluate the efficacy of phosphorous-based MBE-grown layers and quantum dots for quantum-limit strong coupling between a single quantum dot and a photonic crystal slab nanocavity (solid-state entanglement on a chip).Intellectual Merit. Following demonstration of strong coupling in 2004 in Tucson, worldwide progress toward improving the ratio of vacuum Rabi splitting to linewidth, as needed for practical applications in switching and quantum information, has been disappointingly slow. Since the limitation on linewidth is cavity Q, reported values as high as 700,000 for GaAs-slab/GaInP-sacrificial-layer empty cavities compared with typically 30,000 in GaAs/AlGaAs motivate this project to optimize the growth of P-based layers and dots for strong coupling. Success could transform the whole field of semiconductor cavity QED. Much of the P-based growth has been by MOCVD (apparently adequate for electronics and lasers), but the surfaces are too rough for fabrication of high-Q cavities. This project would first grow flat layers for empty high-Q cavities and then grow dots within the center of the slab.Broader Impacts. The principal impact of success would be much more robust semiconductor quantum devices, much less susceptible to dephasing caused by photon escape from low-Q cavities. This would make the devices much more useful for single photon switches and for quantum state transfer between internal states of separated cavities. Training of graduate students in quantum optics and the required experimental skills of cryogenics and spectroscopy is another important impact. Mentoring RET teachers and REU students helps attract bright students into scientific and engineering careers.
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Semiconductor Cavity QED
  • 批准号:
    1205301
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $45.0万
  • 财政年份:
    2012
  • 负责人:
    Galina Khitrova
  • 依托单位:
Semiconductor Cavity QED
  • 批准号:
    1066456
  • 项目类别:
    Standard Grant
  • 资助金额:
    $14.5万
  • 财政年份:
    2011
  • 负责人:
    Galina Khitrova
  • 依托单位:
Semiconductor Cavity QED
  • 批准号:
    0757707
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $52.82万
  • 财政年份:
    2008
  • 负责人:
    Galina Khitrova
  • 依托单位:
Semiconductor Cavity QED
  • 批准号:
    0457096
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2005
  • 负责人:
    Galina Khitrova
  • 依托单位:
海外基金