Nonlinear photonic crystal devices
非线性光子晶体器件
基本信息
- 批准号:0801684
- 负责人:
- 金额:$ 33万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2008
- 资助国家:美国
- 起止时间:2008-05-01 至 2011-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
AbstractECCS-0801684B. W. Wessels, Northwestern UniversityIntellectual merit: Photonic crystals (PC) have been proposed for a number of optical devices for high bit rate fiber-optic communication and information processing systems. These include tunable optical switches and ultra-wide bandwidth modulators. Non-linear photonic crystal waveguide structures are proposed for improving the bandwidth of these devices. Ferroelectric oxides will be used due to their large optical non-linearities and photo and thermal stability. With the recent development of low-loss, epitaxial ferroelectric thin film waveguides and low V electro-optic modulators, a number of high bandwidth devices suitable for optical signal processing are possible. This work builds on our recent demonstration of thin film ferroelectric BaTiO3 with electro-optic coefficients of 360-440 pm/V. Non-linear photonic crystal waveguide devices will be fabricated for ultra-wideband frequency operation (100 GHz). Devices will be fabricated from the non-linear oxide waveguides including 1-D and 2-D photonic crystal eo modulators and optical switches. Devices will be fabricated using vapor phase epitaxial deposition, and both conventional photolithography and nanolithography. Factors limiting bandwidth will be determined through modeling and testing. Their transmission, operating parameters and bandwidth will be measured. Chip-scale integration of several devices with a single platform will be pursued using thin film ferroelectric technology.Broader impact: By using non-linear photonic crystals with large optical non-linearities, significant improvements in bandwidth, operating voltage, and size are expected compared to conventional devices. The program will involve training of undergraduates, and graduate students as well as mentoring K-12 students. Industrial outreach through related STTR programs and industrial and government lab internships will be pursued.
摘要ECCS-0801684 B。W. Wessel,西北大学智力优势:光子晶体(PC)已被提出用于高比特率光纤通信和信息处理系统的许多光学器件。这些包括可调谐光开关和超宽带调制器。为了提高这些器件的带宽,提出了非线性光子晶体波导结构。铁电氧化物由于其大的光学非线性以及光和热稳定性而将被使用。近年来,随着低损耗、外延铁电薄膜波导和低V电光调制器的发展,一系列适用于光信号处理的高带宽器件成为可能。这项工作建立在我们最近演示的薄膜铁电钛酸钡与电光系数为360-440 pm/V。非线性光子晶体波导器件将被制造为超宽带频率操作(100 GHz)。器件将由非线性氧化物波导制成,包括一维和二维光子晶体电光调制器和光开关。器件将使用气相外延沉积,以及传统的光刻和纳米光刻制造。限制带宽的因素将通过建模和测试来确定。将测量它们的传输、工作参数和带宽。更广泛的影响:通过使用具有大光学非线性的非线性光子晶体,与传统器件相比,预期在带宽、工作电压和尺寸方面将有显着改善。该计划将涉及本科生和研究生的培训以及指导K-12学生。通过相关的STTR计划和工业和政府实验室实习的工业推广将继续进行。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Bruce Wessels其他文献
Role of Stoichiometry in the Growth of Large Pb2P2Se6 Crystals for Nuclear Radiation Detection
化学计量在用于核辐射检测的大型 Pb2P2Se6 晶体生长中的作用
- DOI:
10.1021/acsphotonics.7b01119 - 发表时间:
2017-12 - 期刊:
- 影响因子:7
- 作者:
Yadong Xu;Xu Fu;Hongjian Zheng;Yihui He;Wenwen Lin;Kyle McCall;Zhifu Liu;Sanjib Das;Bruce Wessels;Mercouri Kanatzidis - 通讯作者:
Mercouri Kanatzidis
Bruce Wessels的其他文献
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{{ truncateString('Bruce Wessels', 18)}}的其他基金
PFI:AIR - TT: BaTiO3 Photonic Crystal Electro-optic Devices for 50 GHz Applications
PFI:AIR - TT:适用于 50 GHz 应用的 BaTiO3 光子晶体电光器件
- 批准号:
1500222 - 财政年份:2015
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
Disorder Effects on Magnetism in Dilute Magnetic Semiconductors
稀磁半导体中磁性的无序效应
- 批准号:
1305666 - 财政年份:2013
- 资助金额:
$ 33万 - 项目类别:
Continuing Grant
Investigation of oxide nanophotonic devices
氧化物纳米光子器件的研究
- 批准号:
1201853 - 财政年份:2012
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
Synthesis, Structure and Properties of III-V Ferromagnetic Semiconductor Thin Films
III-V族铁磁半导体薄膜的合成、结构与性能
- 批准号:
0804479 - 财政年份:2008
- 资助金额:
$ 33万 - 项目类别:
Continuing Grant
Dynamic Response of Epitaxial Ferroelectric Thin Films
外延铁电薄膜的动态响应
- 批准号:
0605292 - 财政年份:2006
- 资助金额:
$ 33万 - 项目类别:
Continuing Grant
Non-Linear Optical Waveguide Devices for Nanophotonics
用于纳米光子学的非线性光波导器件
- 批准号:
0457610 - 财政年份:2005
- 资助金额:
$ 33万 - 项目类别:
Continuing Grant
Synthesis, Structure and Magnetic Properties of III-V Ferromagnetic Semiconductors
III-V族铁磁半导体的合成、结构及磁性能
- 批准号:
0511523 - 财政年份:2005
- 资助金额:
$ 33万 - 项目类别:
Continuing Grant
Spin Electronics: High Temperature Ferromagnetic Semiconductor Materials and Devices
自旋电子学:高温铁磁半导体材料和器件
- 批准号:
0224210 - 财政年份:2002
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
Ultra-High-Capacity Optical Communications and Networking: Integrated Guided Wave Devices for Terabit per Second Optical Communications
超高容量光通信和网络:用于每秒太比特光通信的集成导波器件
- 批准号:
0123469 - 财政年份:2001
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
GOALI: Defect Structure of Epitaxial Wide Gap III-V Semiconductors
GOALI:外延宽禁带 III-V 族半导体的缺陷结构
- 批准号:
9705134 - 财政年份:1997
- 资助金额:
$ 33万 - 项目类别:
Standard Grant
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