3D Integrated 80Gb/s SiGe Heterojunction Bipolar Electroabsoprtion Modulator

这项研究的目标是创造一种新型的硅基电吸收调制器，其工作带宽达到前所未有的80 Gb/S。该方法是利用3D晶片键合技术将光垂直耦合到纳米线高折射率对比度硅波导中。调制器的基本电路结构为梯度基区SiGe异质结晶体管，利用自由载流子等离子体效应产生光吸收调制。智能优势：对于大容量光纤系统，硅基、单片集成的FAST EAM是商用III-V化合物半导体调制器的一种有吸引力的替代技术。这项研究将探索SiGe异质结晶体管中的载流子输运现象及其相应的光衰减效应，以及调制深度、信号色散、工作速度、功耗和局部加热效应之间的各种设计权衡。建议的工作将使用未经修改的硅制造工艺来设计完全集成的调制器驱动电路。更广泛的影响：80Gbps、低功耗和小占地面积的基于硅的EAM将成为推动下一代宽带光纤网络和用于高速计算的光波电路发展的突破性技术。有一个强大的，协同的教育和辅导组成部分，为所有级别的学生。外展工作将扩大代表不足的群体和本科生参与这两个机构的研究项目。K-12外展活动将与RPI的纽约新愿景方案合作，并通过塔夫茨的工程教育外展中心(CEEO)进行。

The objective of this research is to create a new class of Si-based electroabsorption modulators (EAM) that operate at an unprecedented bandwidth of 80Gb/s. The approach is to use 3D wafer bonding technology to vertically couple light into a nanowire high-index contrast silicon waveguide. A graded base SiGe heterojunction transistor is the baseline electric structure of the modulator, while the free carrier plasma effect is used to generate optical absorption modulation. Intellectual merits: For high capacity fiber-optic systems, a Si-based, monolithically integrated fast EAM is an appealing alternative technology to commercial III-V compound semiconductor based modulators. The proposed research will explore the carrier transport phenomena and its corresponding optical attenuation effect in a SiGe heterojuction transistor, as well as various design trade-offs among modulation depth, signal dispersion, operation speed, power consumption, and local heating effects. The proposed work will design a fully integrated modulator driver circuit using unmodified, silicon fabrication processes. Broader impacts: An 80Gbps, low-power, and small footprint Si based EAM will be a breakthrough technology in advancing the development of the next generation of broadband fiber-optic networking and lightwave circuits for high-speed computing. There is a strong, synergistic educational and mentoring component for students at all levels. Outreach efforts will broaden participation of under-represented groups and undergraduate students in research programs at both institutions. K-12 outreach activities will be in collaboration with New York New Vision program at RPI, and through the Center for Engineering Educational Outreach (CEEO) at Tufts.