Novel Optically-Activated High-Voltage and Single-Bias Wide-Bandgap High-Frequency Thyristor for Next-Generation Smart Grid

研究目标和方法：1)实现和优化高增益、高电压(10千伏、35安)、高温的碳化硅集成晶闸管，该集成晶闸管采用极低功率、短波长单色光子源，采用混合集成的非锁存方式触发；2)通过优化光吸收效率、寿命控制和局域光生-复合工艺，降低碳化硅集成晶闸管的光触发功率需求；3)用于性能验证的原型器件的实验表征。智能优点：新型全光单偏置(即仅功率偏置)碳化硅集成晶闸管在包括ETO/IGCT/MTO在内的所有芯全电多偏置高压集成晶闸管的基础上得到了改进。此外，集成晶闸管还在多个方面为高压电力系统提供了最先进的SIC DMOSFET和SIC IGBT的卓越解决方案。在响应时间和开关频率、可靠性、易于触发、导通下降、电流和电压可伸缩性、制造、导热、抗电磁干扰、电隔离和能量转换效率方面，双极器件提供了许多器件和系统级的优势。广泛影响：高压碳化硅集成晶闸管的影响预计将是根本性的，应用包括直接电网接口太阳能、风能、燃料电池逆变器、储能系统、FACTS、电能质量调节器、高压直流系统、电机驱动、固态变压器、故障电流限制器和脉冲电力系统。拟议的项目将为一名博士研究员提供博士教育。此外，还将为多名本科生(包括少数族裔)和中学生提供研究/教育机会。研究结果将纳入UIC的本科生和研究生课程。

Research Objectives and Approaches:The objectives of this project are as follows: 1) To realize and optimize a high-gain, high voltage (HV) (10 kV, 35 A), and high-temperature SiC Integrated Thyristor, which is triggered in a non-latched manner using a very low power and short-wavelength single monochromatic photonic source by hybrid integration; 2) To reduce the optical-triggering power requirement of the SiC-based Integrated Thyristor by optimization of optical-absorption efficiency, lifetime control, and localized photogeneration-recombination process; and 3) Experimental characterizations of the fabricated prototype device for performance validation.Intellectual Merit:The novel all-optical and single-bias (i.e. only the power bias) SiC Integrated Thyristor improves upon all core all-electrical multi-bias HV integrated thyristors including ETO/IGCT/MTO. Further, the Integrated Thyristor also provides a superior solution to the state-of-the-art SiC DMOSFET and SiC IGBT for the HV power systems in multiple aspects. The bipolar device provides numerous device and system level advantages with regard to response time and switching frequency, reliability, ease of triggering, on-state drop, current and voltage scalabilities, fabrication, thermal conductivity, electromagnetic-interference immunity, electrical isolation, and energy-conversion efficiency.Broader Impacts:The impact of the HV SiC Integrated Thyristor is expected to be radical with applications including direct-grid-interface solar, wind, fuel-cell inverters, energy-storage systems, FACTS, power-quality conditioners, HVDC systems, motor drives, solid-state transformers, fault-current limiters, and pulsed-power systems. The proposed project will provide doctoral education to a Ph.D. researcher. Further, multiple undergraduate (including minority) students and middle-school students will be provided research/educational opportunities. Results of the research will be integrated into an undergraduate and a graduate course at UIC.