EFRI 2-DARE: Scalable Growth and Fabrication of Anti-Ambipolar Heterojunction Devices

无线网络、全球定位系统、无线传感器网络和射频电子等通信系统对国家的基础设施至关重要，并对日常生活产生了革命性的影响。然而，无线技术的现有应用往往受到发送和接收信号的底层电子开关或晶体管的功耗和速度的限制。此外，当前类型的晶体管必须集成到复杂的电路中才能执行简单的功能。该奖项支持制造新型晶体管所需的基础研究，这些晶体管可以改善现有通信技术的性能，并通过在柔性衬底上实现简化的电路设计来开辟新的应用。开发廉价和可扩展的新晶体管材料的方法将促进将这些器件纳入新技术。新型晶体管和通信电路的计算机模型将与行业合作伙伴共享，以促进知识和能力向行业转移，促进高科技经济的增长。包括与芝加哥科学与工业博物馆合作在内的推广计划将招募更多的年轻人从事对国家至关重要的科学技术-S经济和国防。拟议工作的目标是通过将有前途的二维单层过渡金属二卤化物与其他低维半导体集成在一起，创造、表征、理解和开发新型电子和光电设备，包括p型有机半导体、分类半导体单壁碳纳米管和其他二维材料。该项目将制造新型的混合维度的超薄p-n异质结，这种异质结因栅极的透明度和灵活性而表现出独特的和数量上的优势，并使用先进的扫描探头技术来表征设备，以及传统的电流和电容与电压的测量。将设计和合成定制的化学前驱体，目标是在较低的温度下通过大面积原子层沉积实现可伸缩生长和制造超薄二氢碳化物。为了了解器件物理如何导致新的特性和电路性能，唯象模型将被集成到业界公认的纳米器件模拟器中，并将开发出一个紧凑的模型。超薄异质结的基础知识和预测模型将通过对电荷传输的定量了解、新器件特征的展示(如最近发现的反双极行为)以及利用这些行为在柔性衬底上创建新的电子电路来扩展工程前沿，与传统的基于单极场效应晶体管的电路相比，这些电路具有更简单的设计和更少的元件。

Communications systems such as WiFi, GPS, wireless sensor networks, and radio frequency electronics are critical to the nation?s infrastructure and have had a transformative impact on daily life. However, existing applications of wireless technologies are often limited by the power consumption and speed of the underlying electronic switches, or transistors, that send and receive signals. Furthermore, current classes of transistors must be integrated into complex circuits to perform simple functions. This award supports the fundamental research necessary to make new classes of transistors that can improve the performance of existing communications technologies and open up new applications by enabling simplified circuit designs on flexible substrates. The development of inexpensive and scalable approaches to new transistor materials will facilitate the incorporation of these devices into new technologies. Computer models of novel transistors and communications circuits will be shared with industry partners to facilitate the transfer of knowledge and capabilities to industry, growing the high-tech economy. Outreach programs including cooperation with the Chicago Museum of Science and Industry will recruit a broad group of young people to careers in science and technology crucial to the nation?s economy and defense.The objective of the proposed work is to create, characterize, understand, and exploit new classes of electronic and optoelectronic devices by integrating promising two-dimensional monolayer transition metal dichalcogenides with other low dimensional semiconductors including p-type organic semiconductors, sorted semiconducting single walled carbon nanotubes, and other two-dimensional materials. The project will fabricate novel ultrathin p-n heterojunctions of mixed dimensionality that exhibit unique and quantitatively advantageous properties arising from gate transparency and flexibility, and characterize the devices with advanced scanned probe techniques in addition to conventional current and capacitance versus voltage measurements. Custom chemical precursors will be designed and synthesized with the goal of achieving scalable growth and fabrication of ultrathin dichalcogenides by atomic layer deposition over large areas at reduced temperatures. To understand how the device physics leads to new properties and circuit performance, phenomenological models will be integrated into industry accepted nanodevice simulators, and a compact model will be developed. The fundamental knowledge and predictive models of ultrathin heterojunctions will expand engineering frontiers through quantitative understanding of charge transport, the demonstration of novel device characteristics, such as the recently discovered anti-ambipolar behavior, and the exploitation of these behaviors to create novel electronic circuits on flexible substrates with simpler designs and fewer elements than conventional unipolar field effect transistor-based circuits.