DMREF: SusChEM: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary Heterostructures

DMREF：SusChEM：杂价三元氮化物半导体和混合三元-二元异质结构非技术描述：二元氮化物半导体氮化镓、氮化铟和氮化铝及其合金在光电子学和大功率电子学中具有重要的商业应用，但铟和镓价格昂贵且稀缺，并且仅基于这三种化合物的混合物的器件的性能的设计和控制的灵活性受到限制。对更大但研究得少得多的三元氮化物半导体家族的兴趣日益增长，所述三元氮化物半导体家族包括例如氮化锌锗和氮化锌锡，其通过用相等比例的II族和IV族元素替代III族二元元素而形成。 在这几十种潜在有用的材料中，有许多完全由地球上丰富的、廉价的、无害的元素组成。三元氮化物的复杂性增加，以及材料和组合的数量增加，预计将导致新的材料特性和设计的更大灵活性。该项目将通过将理论计算和器件和性能建模与合成和表征结合起来，加速对这一新材料家族的研究，重点是这些材料的重要子集。新的和存档的结果，通过一个互动的网站访问的数据库免费提供给社会将促进研究小组之间的网络，这将加快对理解和控制这些材料的性能和开发新的应用程序的进展不断增长。技术说明：本研究将着重于开发ZnGeN 2和ZnGeN 2-GaN混合三元-二元异质结构的金属有机化学气相沉积（MOCVD）生长和掺杂方法。这一重点将利用GaN生长和掺杂的成熟技术，通过MOCVD成功生长ZnGeN 2的早期示范，两种材料的紧密晶格失配以及它们的密切优化生长条件的战略优势。该焦点还将利用理论上预测的两种材料之间的大能带偏移，这两种材料在近紫外线下具有相似的带隙，从而设计和合成这种情况下产生的有趣的异质结构和合金系统。理论和实验结果，结合网络的发展，基于在这一领域工作的研究小组的公开访问的数据库网站，将为扩大对这一大家族的材料的研究工作奠定基础。

DMREF: SusChEM: Heterovalent Ternary Nitride Semiconductors and Mixed Ternary-Binary HeterostructuresNon-technical Description: The binary nitride semiconductors gallium nitride, indium nitride and aluminum nitride and their alloys have found important commercial applications in optoelectronics and high-power electronics, but indium and gallium are expensive and scarce, and flexibility in the design and control of the properties of devices based upon mixtures of just these three compounds is limited. There is growing interest in the much larger, but much less well-studied, family of ternary nitride semiconductors that include, for example, zinc germanium nitride and zinc tin nitride, formed by replacing the group III binary element with equal proportions of group II and group IV elements. Many of these dozens of potentially useful materials are composed entirely of earth-abundant, inexpensive, and benign elements. The increased complexity of the ternary nitrides, and the greater number of materials and combinations, is expected to lead to new materials properties and more flexibility in their design. This project will accelerate research on this new family of materials by combining efforts in theoretical calculations and modeling of devices and properties with synthesis and characterization focused on an important subset of these materials. Dissemination of new and archived results via an interactive website-accessed database available freely to the community will foster a growing network among research groups that will accelerate progress toward understanding and controlling the properties of these materials and developing new applications for them. Technical Description: The research will focus on developing growth and doping methods for ZnGeN2 and ZnGeN2-GaN mixed ternary-binary heterostructures by metalorganic chemical vapor deposition (MOCVD). This focus will take strategic advantage of the mature technology for GaN growth and doping, earlier demonstrations of successful growth of ZnGeN2 by MOCVD, the close lattice mismatch of the two materials, and their close optimized growth conditions. The focus additionally will take advantage of the theoretically predicted large band offset between the two materials, which have similar band gaps in the near-ultraviolet, in the design and synthesis of the interesting heterostructure and alloy systems that result from this situation. The theoretical and experimental results, combined with the development of a network, based upon the publicly accessible database website for research groups working in this area, will lay the foundation for expanding research efforts on this large family of materials.