EAGER: Advancing High-Efficiency Nanoscale Antiferromagnetic Spintronics with Two-Dimensional Half Metals

反铁磁体在自旋电子学中具有独特的优势，如相变温度高、零杂散场等，在自旋电子学中具有广阔的应用前景。这些特性使得反铁磁体对高密度集成器件很有吸引力，因为每个磁比特都对热和环境磁场扰动具有健壮性，并且相邻比特不会相互干扰。然而，零磁化是反铁磁体的固有属性，通常被认为是限制其应用的主要因素。尽管有零磁化，费米表面的电子可以是100%自旋极化的，这对于高效率的自旋电子器件是非常理想的。通过合理的反铁磁半金属材料设计，可以实现一种新型的自旋场效应晶体管。这项工作将从根本上推进纳米级自旋电子学及其在信息处理和存储中的应用。该项目支持一种新型的二维材料--反铁磁性半金属的研究和自旋场效应晶体管的开发。这项研究可以从根本上影响最先进的自旋电子学以及相关的信息处理和存储应用。这项工作也将为教育活动提供一个很好的平台。这种跨学科的研究汇集了来自材料科学家、物理学家和电子工程师的研究人员。这需要共同努力来设计和合成有前景的反铁磁材料，制造纳米级晶体管，以及测量和优化器件性能。

Antiferromagnets hold promise in spintronics, due to the unique advantages over ferromagnets, such as high phase transition temperatures and null stray field. These characteristics make antiferromagnet appealing for high-density integrated devices, because each magnetic bit is robust against thermal and environmental magnetic field perturbation, and adjacent bits does not interfere mutually. However, zero-magnetization, an intrinsic attribute of antiferromagnet, usually is considered to be a primary factor limiting its applications. Despite of zero-magnetization, the Fermi surface electrons can be 100% spin-polarized, highly desirable for high-efficiency spintronic devices. Through rational material design of antiferromagnetic half metals, a novel type of spin field effect transistor can be realized. The work will fundamentally advance the nanoscale spintronics and the applications in information processing and storage. This project supports the study of a novel type of two-dimensional materials, antiferromagnetic half metals, and the development of spin field effect transistors. The study can fundamentally impact the state of the art spintronics and the related applications in information processing and storage. This work would also provide an excellent platform for education activities. Such an interdisciplinary research brings together researchers from material scientists, physicists, and electronic engineers. It requires concerted efforts to design and synthesize the promising antiferromagnetic materials, fabricate nanoscale transistors, and measure and optimize the device performance.