EAGER: Exploring silicon nitride for high speed electro-optic modulation

这个项目将探索我们是否可以开发出一种与互补金属氧化物半导体(CMOS)制造兼容的电光氮化硅。集成光子学的理想材料是与CMOS电子学兼容、具有高折射率、沉积、电光活性和低损耗的材料，但目前的光子平台不能满足这些特性。在过去的二十年里，硅因其高折射率和与CMOS电子学的相对兼容性而给光子学带来了革命性的变化，而利用等离子体色散效应进行折射率调制的硅光子平台从根本上受到载流子损耗的限制。这种基本损耗限制了硅光子学在量子信息科学、超低功率通信和基于芯片的激光雷达中的影响。氮化硅是一种高折射率、低损耗的CMOS兼容材料，但它是无源的。电光氮化硅(EO-SiN)具有彻底改变集成光子学领域的潜力。如果成功，人们可以设想一个集成在单个芯片上的EOSiN平台，用于调制、低损耗引导、开关和非线性功能。拟议的项目将为卡恩斯中心向上绑定计划的一名高中生创造独特的体验。这一经历包括暑期为期六周的实习。学生将沉浸在研究小组中，与其他本科生、硕士和博士生一起从事一个项目。这项工作的目标是让一名第一代低收入高中生接触STEM领域，以激励他们在数学、科学和工程领域从事职业。这些学生将得到来自McNair研究员(本科生)、硕士学生、博士生和PI的综合指导，因为他们加强并发现在前沿研究工作的兴奋。PI建议探索我们是否可以利用电子极化在氮化硅中设计电光效应。作为对电光氮化硅潜力的概念验证，我们将展示一种氮化硅片上高速调制器。了解如何在氮化硅中实现电光效应，将会产生一种高折射率、低损耗、与CMOS兼容的沉积材料以及在不引起损耗的情况下调节折射率的能力。它将澄清以前在氮化硅中观察到的二次谐波产生的来源，假设它来自表面效应或氮化硅的块状性质。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

This project will explore whether we can develop a electro-optic silicon nitride that is compatible withcomplementary metal oxide semiconductor (CMOS) fabrication. The ideal material for integratedphotonics is compatible with CMOS electronics, has a high refractive index, is deposited, electroopticallyactive, and low loss; however, current photonic platforms fall short of meeting thesecharacteristics. While silicon has revolutionized photonics over the last two decades because of its highrefractive index and relative compatibility with CMOS electronics, the silicon photonic platform, whichuses the plasma dispersion effect for refractive index modulation, is fundamentally limited by carrier loss.This fundamental loss limits the impact of silicon photonics in quantum information science, ultra-lowpower communications, and chip-based LIDAR. Silicon nitride is a CMOS compatible material with highrefractive index and low loss; however, it is passive. Electro-optic silicon nitride (EO-SiN) has thepotential to completely change the field of integrated photonics. If successful, one can envision an EOSiNplatform for modulation, low loss guiding, switching, and nonlinear functionalities all integrated on asingle chip.The proposed project will create a unique experience for one high school student from the Kearns CenterUpward Bound Program. The experience consists of a six-week internship during the summer. Thestudent will be immersed in the research group working on a project alongside other undergraduate,master's and PhD students. The goal of this effort is to expose one first-generation, low-income highschool student to STEM fields to motivate them to follow a career in math, science, and engineering. Thestudents will receive an integrated mentorship from McNair fellows (undergraduate students), master'sstudents, PhD students, and the PI as they reinforce and discover the excitement of working in cuttingedge research.Technical descriptionThe PI proposes to explore whether we can engineer an electro-optic effect in silicon nitride usingelectrical poling. As a proof-of-concept of the potential of electro-optic silicon nitride, we willdemonstrate a silicon nitride, on-chip, high-speed modulator. Understanding how to engineer an electroopticeffect in silicon nitride will bring forward a high refractive index, low loss, deposited material withCMOS compatibility and the ability to modulate the refractive index without inducing loss. It will clarifythe origin of previously observed second harmonic generation in silicon nitride, which is hypothesized tocome from either surface effects or the bulk properties of silicon nitride.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.