CAREER: Toward sub-60-mV/decade steep transistors using Dirac-source carrier injection and high-mobility 2D monochalcogenides

提案标题使用狄拉克源载流子注入和高迁移率单族化合物的二维高性能陡峭晶体管非技术摘要下一代量子技术需要能够以更快的开关速度和更少的能量消耗运行的新型纳米电子器件。目前，由热离子发射驱动的硅基金属氧化物半导体场效应晶体管需要至少60 mV的栅极电压才能在室温下将电流增加一个数量级。陡斜率晶体管，如隧道晶体管和铁电负电容晶体管，开关速度能够超过60 mV/十年的限制，但它们在实际应用中也面临着自己的挑战和问题。为了应对这些挑战，拟议的研究重点是研究一种新的陡坡器件概念，称为狄拉克源极晶体管，它由二维石墨烯和新兴的高迁移率单醇化合物组成。具体地说，(I)对基于石墨烯的Dirac源载流子注入机理的基本了解，(Ii)作为沟道材料的单醇化合物的合成工艺和电子性质的研究，以及(Iii)陡坡Dirac源晶体管的演示。所提出的在纳米尺度上受量子力学支配的解决方案被认为是一种很有前途的技术，可以很好地将摩尔定律扩展到量子时代。该项目通过将研究、教育和推广计划与量子纳米材料和纳米电子学密切结合，提出活动，并让大学和当地社区的实体参与进来。拟议的基础和多学科项目不仅代表了2D材料研究领域的尖端技术，而且为培养本科生和研究生，以及延伸到K-12、女性和STEM学科中代表不足的少数族裔学生，以满足国家的劳动力需求提供了一个极好的培训计划。技术摘要随着互补金属氧化物半导体(CMOS)的小型化接近其物理极限，迫切需要新技术来扩展电子系统在功率、速度和密度等方面的性能。所提出的Dirac源陡峭晶体管被认为是一种新的器件概念，它能够在低于0.5V的电源电压下工作，并且开关速度快于60 mV/ten的限制。这种优异的性能归功于二维石墨烯和半导体单醇化合物的协同结合，通过其van der Waals异质结构中独特的Dirac源载流子注入机制。该研究方法将理论模拟和实验演示相结合，以追求最终成果：(I)对狄拉克源载流子注入机制的基本了解；(Ii)新兴的2D半导体单醇化合物的高分辨率数据库和工程原理；以及(Iii)具有陡峭的亚阈值斜率和低能耗的逻辑器件的原型演示。这项拟议研究的智力意义包括提供创新的解决方案(狄拉克源载流子注入)来满足节能电子设备的需求，基于新兴的二维半导体沟道材料(单硫化物)独特的结构和性质探索其尚未开发的潜力，以及代表着量子科学和技术的重大突破，将摩尔定律很好地扩展到量子时代。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Proposal TitleTwo-dimensional high-performance steep transistors using Dirac-source carrier injection and high-mobility monochalcogenidesNon-Technical AbstractNext-generation quantum technologies demand for novel nanoelectronic devices that can operate at faster switching speed and with less energy consumption. Currently, silicon-based metal-oxide-semiconductor field-effect transistors, driven by thermionic emission, require at least 60 mV of gate voltage to increase the current by one order of magnitude at room temperature. Steep slope transistors such as tunneling transistors and ferroelectric negative capacitance transistors are capable of switching faster than the limit of 60 mV/decade, but they suffer their own challenges and issues for practical applications. To address these challenges, the proposed research focuses on investigation of a novel steep-slope device concept, known as the Dirac-source transistor, which is composed of two-dimensional graphene and emerging high-mobility monochalcogenides. Specifically, (i) fundamental understanding of a graphene-based Dirac-source carrier injection mechanism, (ii) investigation of synthesis technology and electronic properties of the monochalcogenides as the channel materials, and (iii) demonstration of a steep-slope Dirac-source transistors. The proposed solution governed by quantum mechanics on the nanometer scale is foreseen as a promising technique for extending Moore’s Law well into the quantum era. This project proposes events and involves entities across the university and local communities through close integration of research, education, and outreach programs with the focus on quantum nanomaterials and nanoelectronics. The proposed fundamental and multidisciplinary project will not only represent the state-of-the-art technology in the 2D material research field, but also provide an excellent training initiative for educating both undergraduate and graduate students, and for outreaching to K-12, women, and underrepresented minority students in STEM disciplines to fulfill the nation’s workforce needs.Technical AbstractAs the miniaturization of complementary metal-oxide-semiconductor (CMOS) approaches its physical limitation, new technologies are critically needed to extend the performance of electronic systems in terms of power, speed, and density, etc. The proposed Dirac-source steep transistor is considered as a novel device concept, which is capable of working at a supply voltage less than 0.5 V and switching faster than the limit of 60 mV/decade. Such excellent performance is attributed to a synergetic combination of two-dimensional graphene and semiconducting monochalcogenides through the unique Dirac-source carrier injection mechanism in their van der Waals heterostructure. The research approach combines both theoretical simulation and experimental demonstration to pursue the final deliverables: (i) a fundamental understanding of the Dirac-source carrier injection mechanism; (ii) a high-resolution database and engineering principle of the emerging 2D semiconducting monochalcogenides; and (iii) a prototypical demonstration of the logic devices with steep subthreshold slope and low energy consumption. The intellectual significance of the proposed research includes providing innovative solution (Dirac-source carrier injection) to address the need of energy-efficient electronic devices, exploring the untapped potential of emerging two-dimensional semiconducting channel materials (monochalcogenides) based on their unique structure and properties, and representing a major breakthrough in quantum science and technology for extending Moore’s law well into the quantum era.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.