FuSe-TG: Physical Computing Co-Design using Three-terminal Devices

这项工作的重点是教育和培训本科生的半导体相关研究，从一个合校的夏季学期开始，一直持续到接下来的秋季和春季学期。这项计划拨款侧重于建立一个研究社区，使本科生能够在研究生和主要研究人员(PI)的指导下，在这个研究空间中进行合作设计。该项目包括在前一个春季学期的培训方面的发展，以教授、培训和赋予学生权力，以及培训研究生如何教授这个社区。这笔团队助学金将促进团队成员和学生之间的协调，以在所有调查人员中建立一个强大、有凝聚力的核心团队。这些技术活动将使每个PI能够学习彼此的学科，并在半导体研究方面确定引人注目的未来机会领域。这项工作着眼于使用多个三个(或更多)端子非易失性存储器(NVM)设备进行从材料到设备、到电路到初始系统的联合设计，这些设备在个人之间的专业知识存在显著重叠，从而能够在这些领域的边界建立社区，并在这些领域进行有效的合作设计。这一努力将培养本科生，使他们能够在合作设计中解决未来的问题，并使研究生能够指导这一未来的劳动力。这项奖励侧重于使用浮栅(FG)和电化学RAM(ECRAM)器件的初步研究，这两种器件与标准的互补金属氧化物半导体(CMOS)集成在一起，提供了巨大的物理计算机会，并减少或消除了元件失配。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

This effort focuses on educating and training undergraduate students in semiconductor-related research, starting from a co-located summer semester that will continue through the following fall and spring semesters. This planning grant focuses on building a research community enabling undergraduate students to co-design in this research space with the mentorship of graduate students and the principal Investigators (PIs.) The project includes the development of training aspects during the previous spring semester to teach, train, and empower students, as well as training graduate students on how to teach this community. This teaming grant will facilitate coordination between the team members and students to build a strong, cohesive core team among all the investigators. The technical activities will enable each PI to learn other's disciplines and identify compelling areas of future opportunity with semiconductor research.This effort looks to co-design from materials, to devices, to circuits, to initial systems using multiple three (or more) terminal Non-Volatile Memory (NVM) devices with significant overlap in expertise between the individuals to enable building community at the boundaries of these fields as well as effective co-design in these areas. The effort will train undergraduate students enabling a workforce capable of tackling future questions in co-design, as well as enabling graduate students to mentor this future workforce. This focuses initial research using Floating-Gate (FG) and Electro-Chemical RAM (ECRAM) devices, two potential components that integrate with standard Complementary metal-oxide-semiconductor (CMOS) and provide huge physical computing opportunities as well as reducing or eliminating component mismatch.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.