Resistive switching mechanism in Mott oxide insulators (B10)

项目B10探索了不同的电阻开关机制发生在使用铬掺杂的V2O3Mott材料的器件中，作为材料结构、氧化学计量比和铬掺杂水平的函数，以及所使用的电极。特别是，它的目的是调查电子相关效应(即真正的“Mott”转变)是否可能是在具有对称电极的器件中观察到的挥发性和/或非易失性电阻开关的机制。因此，计划进行温度和可能依赖于压力的开关实验，并用透射电子显微镜和三磷酸腺苷对其进行详细的表征。

Project B10 explores the different resistive switching mechanisms that occur in devices using Cr-doped V2O3 Mott material, as function of material structure, oxygen stoichiometry and Cr-doping level, and elec-trodes used. In particular, it aims to investigate if electron correlation effects (i.e. a true “Mott” transition) could be the mechanism involved in the volatile and/or non-volatile resistive switching observed in devices with symmetric electrodes. Thus, temperature and possibly pressure-dependent switching experiments are planned as well as detailed characterization by TEM and ATP.