Connection of functional blocks and RF system integration

鉴于基于SiCer的射频微电子和微机电设备和功能块的组合和实施，射频系统集成在Musik第二阶段中发挥着主要作用；这使得增加这一新的和全面的工作部分C3是必要的，也是合理的。在第一阶段成功成果的基础上，本项目基于数值模拟，对整个系统进行跨层射频设计，包括器件、模块和基板之间的所有必要过渡以及它们之间的连接。另一个工作包涉及嵌入到SiCer衬底中的无源电路元件(R、L、C)和网络的设计、建模、分析和适配，以实现演示器的全部功能。此外，还应分析集成模块之间的相互寄生相互作用，从而对适当的设计规则和缓解方法有新的认识。为了解决这些与射频相关的问题，需要考虑A课题组提出的包含寄生效应的参数行为模型来进行系统响应的仿真。最终，射频系统将与部件C1和C2一起制造、组装和包装，然后进行实验验证和分析，并将移交给A项目组(K系统和F系统)和B项目组(F系统和M系统)。应确定和设计合适的射频信号耦合架构，包括射频、低频和直流电路。随着项目的不断推进，C3部分将领导设备、模块的射频测量，以及整个复杂系统的协调设计验证。

In view of the combination and implementation of SiCer-based RF microelectronic and microelectromechanic devices and functional blocks, the RF system integration plays a major role in phase 2 of MUSIK; this necessitates and justifies the addition of this new and comprehensive workpart C3. Based on the successful and promising results of phase 1, this project comprizes the cross-layer RF design, based on numerical simulations, of the complete system, including all necessary transitions between, and connections of, devices, modules and substrate layers.Another workpackage deals with the design, modelling, analysis, and adaptation of the passive circuit elements (R, L, C) and networks, embedded into the SiCer substrate and needed to achieve full functionality of the demonstrator. In addition, the mutual parasitic interaction between the integrated modules shall be analysed, consequently leading to new insight into appropriate design rules and mitigation approaches. To address these RF-relevant aspects, the parametric behavioral models including parasitic effects, put forward by project group A, shall be taken into account for the simulation of the system response. Eventually, the RF system shall be manufactured, assembled and packaged, jointly with parts C1 and C2, followed by experimental verification and analysis, which will be handed over to project group A (K- and F-systems) and project group B (F- and M-systems). Suitable RF signal coupling architectures shall be identified and designed, including RF, LF, and DC ciruitry. With continuing progress of the project, part C3 shall lead the RF measurements of devices, modules, and the coordinated design verification of the entire complex system.