Staggered-Gated Bi-Layer Flexible Inverters with Transferred Highly Oriented Polymer Semiconductors

用定向聚合物半导体制备了40 cm~2的大面积浮动膜。为了制作交错栅极双层逆变器的几何结构，成功地利用商业上可用的n型和p型聚合物如PQT、PBTTT、DPPT-TT和PNDI(20d)2T对单个n型和p型聚合物薄膜和晶体管进行了优化。我们首次成功地制备了n型聚合物PNDI(2OD)2T的定向浮动膜，这对所提出的CMOS反相器是非常关键的。对于交错栅极结构，将不同的聚合物介质与基本的p型和n型聚合物一起用于顶栅和底栅结构。这些结果反映了利用本项目中提出的定向聚合物半导体实现可印刷的CMOS器件的可能性。

Large-area with >40 cm2 of floating films were fabricated with oriented polymeric semiconductors. To fabricate staggered-gated bi-layered inverter geometry, optimization of individual n-type and p-type polymer film and transistor was carried successfully with commercially available n-type and p-type polymers like PQT, PBTTT,DPPT-TT and PNDI(2OD)2T. For the first time, we successfully prepared oriented floating films of n-type polymer PNDI(2OD)2T which was very crucial for the proposed CMOS inverter. For staggered-gated structure, different polymer dielectrics were utilized with basic p-type and n-type polymers for top-gated and bottom-gated architecture. These results reflect the possibility to realize printable CMOS devices using oriented polymeric semiconductors proposed in this project.