Terahertz induced quantum transport in nanostructures

该项目的重点是探索在太赫兹辐射下(纳米级)低维半导体(GaAs-SiGe-和InAs基量子阱)和拓扑绝缘系统(HgTe基)中发生的电输运现象。将从实验和理论上研究的现象包括太赫兹感生磁阻振荡(TIROS)和回旋共振时偏振相关的巨光电流。应在与约菲研究所的同事合作的框架内提出关于上述影响的理论。在这些研究中，太赫兹引起的磁阻振荡，即在太赫兹辐射影响下发生的电导率的1/B周期振荡，起着非常重要的作用。这些振荡类似于众所周知的微波诱导磁阻振荡(MIROS)，但表现出意想不到的极化和频率依赖性，这对目前对这种效应的理解提出了挑战。该项目的总体目标是调查和澄清这些振荡和相关太赫兹引起的传输现象的潜在机制。

The focus of the project lies on the exploration of electrical transport phenomena which occur in (nanopatterned) low-dimensional semiconductor (GaAs- SiGe-, and InAs-based quantum wells) and topological insulator systems (HgTe based) under terahertz irradiation. Phenomena to be investigated, both experimentally and theoretically, include terahertz induced magnetoresistance oscillations (TIROs), and polarization dependent giant photocurrents at cyclotron resonance,. A theory of the above effects should be developed in the framework of cooperation with colleagues from Ioffe institute. A prominent role in these investigations play terahertz induced magnetoresistance oscillations, i.e. 1/B periodic oscillations of the conductivity which occur under the influence of terahertz radiation. These oscillations are similar to the well-known microwave induced magnetoresistance oscillations (MIROs) but show, amongst others, unexpected polarization and frequency dependence which challenges the present understanding of the effect. The overall aim of the project is to investigate and clarify the underlying mechanisms of these oscillations and of related terahertz induced transport phenomena.