Solution based synthesis and electronic characterisation of interfacecontrolled amorphous oxidic multilayer films

氧化铟锌（IZO，半导体）和二氧化锆（ZrO 2，电介质）的多层系统将通过溶液处理路线进行访问，目的是研究它们作为金属氧化物/半导体电容以及场效应晶体管的特性。在合成上，将采用分子单源前体分子。这些化合物可通过直接在溶液中旋涂或通过中间转化成纳米颗粒的稳定分散体而用于薄膜沉积。在这两种情况下，需要后续的热处理以获得功能氧化物层。为了制造MOS电容和FET，必须找到合适的器件设计和工艺条件，在此条件下可以获得尽可能高的性能参数。因此，层的连续沉积应避免层序列内的材料降解，并尽可能少地改变初始材料性质。对于制造过程而言，后续处理步骤固有地影响已经存在的层的电性质。因此，表面吸附物，缺陷化学和界面效应发挥更大的作用，从溶液中的薄膜沉积。电测量使得能够评估不同的制造条件（温度、加热速率、反应气氛）和器件布置（膜厚度和空间尺寸）。最终可以确定氧化物电介质中的载流子密度、界面电荷密度以及电介质和半导体之间的功函数差。关于电介质中的传导机制和器件击穿，应该有可能提出进一步的建议。这些测量将辅之以显微镜和光谱研究，以获得结构和电子特性的全面图像。这一行动过程将允许以目标为导向的设备架构的开发和工艺条件的确定。这项工作的全部内容将允许关于溶液处理的多层氧化物材料IZO/ZrO 2的功能以及复杂器件的更一般制造和操作的具体挑战的结论。

Multilayer systems of indium zinc oxide (IZO, semiconductor) and zirconium dioxide (ZrO2, dielectric) will be accessed by solution processing routes with the aim to study their properties as metal oxide/semiconductor capacity as well as field effect transistors. Synthetically, molecular single source precursor molecules will be employed. These compounds are applicable for thin film deposition by spincoating directly in solutions or by the intermediate conversion to stable dispersion of nanoparticles therefrom. In both cases a subsequent thermal processing is required in order to obtain the functional oxide layers. Appropriate device designs and processing conditions must be found for the fabrication of the MOS capacities and FETs, under which performance parameters as high as possible can be obtained. The successive deposition of the layers should therefore avoid material degradation within the layer sequence and change initial material properties as little as possible. Inherently to the fabrication procedure subsequent processing steps influence the electrical properties of already present layers. Thus, surface adsorbates, defect chemistry and interface effects play a much higher role in film deposition from solution. The electrical measurements enable an assessment of the different fabrication conditions (temperature, heating rate, reaction atmosphere) and device arrangements (film thickness and spatial dimensions). Finally carrier density in the oxidic dielectric, interface charge density as well the difference in the work function between dielectric and semiconductor can be determined. Further propositions should be possible with respect to the conduction mechanism in the dielectric and device break-down. These measurements will be complemented by microscopic and spectroscopic investigations in order to gain a comprehensive picture of the structural and electronic properties. This course of action will allow a target-oriented development of the device architecture and the determination of the process conditions. The entirety of this work will allow conclusions with respect to the functionality of the solution processed multilayer oxide material IZO/ZrO2 as well as to the specific challenges of a more general fabrication and operation of complex devices.