Zinc magnesium oxynitrides

金属氮氧化物已被提出作为薄膜晶体管领域的一种替代材料体系。除非晶硅外，解决这些应用的最常见材料是具有低迁移率的多阳离子化合物（在1-10 cm2 V-1 s-1的顺序），并且通常是非晶的。另一方面，在迁移率和晶体质量方面，zno基高电子迁移率晶体管首次在Si、III-V材料或石墨烯以外的材料中观察到分数量子霍尔效应。在这个项目中，我们的目标是通过分析两个多阴离子族，即氮氧化物：ZnNO和MgNO，来弥合这两个宇宙之间的差距。在ZONE中，我们建议通过磁控溅射和分子束外延生长（Zn,Mg）（N，O）薄膜，研究其物理性质（鲜为人知甚至未知），并制造基本电子器件，特别是hemt，金属半导体和结场效应晶体管（mesfet和jfet）。

Metal oxynitrides have been proposed as an alternative material system in the field of thin film transistors. The most common materials addressing these applications, besides amorphous Si, are multi-cation compounds exhibiting low mobilities (in the order of 1-10 cm2 V-1 s-1) and are often amorphous. On the opposite side in terms of mobility and crystalline quality, ZnO-based high-electron mobility transistors have enabled the first observation of the fractional quantum Hall effect in a material other than Si, III-V materials or graphene. In this project we aim to bridge the gap between these two universes by analyzing two multianion families, namely oxynitrides: ZnNO and MgNO. In ZONE we propose to grow (Zn,Mg)(N,O) thin films by magnetron sputtering and molecular beam epitaxy, to study their physical properties (poorly known or even unknown) and to fabricate basic electronic devices, in particular HEMTs, metal-semiconductor and junction field effect transistors (MESFETs and JFETs).