Printable organic-inorganic hybrid semiconductors for high-mobility and short-channel thin-film transistors

在短沟道长度约为5 μ m时，迁移率超过1 cm^2/Vs的器件特性对于有机薄膜晶体管的实际应用是必要的。在采用新开发的有机半导体制备的沟道长度为5 μ m的顶栅结构薄膜晶体管中，我们获得了在顶栅晶体管线性状态下最高的场效应迁移率为1.5 cm^2/Vs。我们强调，我们已经达到了场效应迁移率的目标值，从而为有机薄膜晶体管的应用开辟了新的时代

The device characteristic in which mobility exceeds 1 cm^2/Vs at the short channel length about 5 \mu m is necessary for practical use of organic thin film transistors. In thin film transistors with top-gate configuration and with channel length of 5 \mu m fabricated using a newly developed organic semiconductor, we have obtained the highest field effect mobility of 1.5 cm^2/Vs in the linear regime of the top-gate transistors. We stress that we have achieved the target value for the field-effect mobility and thereby we have opened new era for the application of organic thin-film transistors