Synthesis of p-type transparent conductive Ti-oxides based films utilizing interface reaction

我们最近在Cu(Ti)/ITO交界面接触电阻的研究中发现，在Cu(Ti)/ITO交界面形成的以TiO2为主的非晶Ti氧化物层将是p型透明导电膜。因此，本研究的目的是在玻璃基板上合成反应膜，并表征其光学和电学性质。铜(10。在40 nm厚的ITO/Glass衬底上沉积了%Ti合金薄膜。将Cu(Ti)/ITO/Glass样品在400℃的超高真空中退火6 h，在玻璃基板上形成厚度约为20 nm的非晶Ti-氧化物层，ITO层因反应而被消除。在可见光区，非晶态氧化钛薄膜的透射率约为70%，片电阻约为1.0 x 10^3 ohm/sq。在室温下载流子密度约为1.0 x 10^22 cm^-3。一价阳离子Cu+对于p型电导率是必不可少的。

We recently found that an amorphous Ti oxide layer consisting of mainly TiO2 forming at the interface between Cu(Ti) and ITO would be a p-type transparent conductive film in the previous study on contact resistance at the Cu(Ti)/ITO junction. Thus, purpose of the present study is to develop a synthesis of the reaction film on glass substrates and to characterize its optical and electrical properties. Cu(10 at.%Ti) alloy films were deposited on 40 nm-thick ITO/Glass substrates. The Cu(Ti)/ITO/Glass samples were annealed in ultrahigh vacuum at 400C for 6 h. The amorphous Ti-oxide layer with about 20 nm in thickness formed on the glass substrate, and the ITO layer was eliminated due to the reaction. The amorphous Ti-oxide films exhibited transmittance of about 70% in visible light region, sheet resistance of about 1.0 x 10^3 ohm/sq., positive Hall coefficient, and carrier density of about 1.0 x 10^22 cm^-3 at RT. The univalent cation Cu+ would be essential for the p-type conductivity.