Developments of new complex materials using mime and interface diffusion of the supersaturated alloy elements in thin films

利用哑剧和薄膜中过饱和合金元素的界面扩散开发新型复合材料

• 批准号: 18360324
• 负责人: ITO Kazuhiro
• 金额: $ 10.18万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18360324/
• 关键词: Thin Films; Cu Interconnects; Self-formation; Ohmic Contacts; SiC; 表皮効果

Thin Ti-rich diffusion barrier layers were found to be formed at the interface between Cu(Ti) films and SiO_2/Si substrates after annealing at elevated temperatures. This technique was called "self-formation of the diffusion barrier," which is attractive for fabrication of ultra-large scale integrated (ULSI) interconnects. Furthermore, we investigated the applicability of this technique to Cu(Ti) alloy films which were deposited on the four low dielectric constant (low-k) dielectric layers which are potential dielectric layers of future ULSI-Si devices. The microstructures were analyzed by transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS), and correlated with the electrical properties of the Cu(Ti) films. It was concluded that the Ti-rich interface layers were formed in all the Cu(Ti)/dielectric-layer samples. The primary factor to control composition of the self-formed Ti-rich interface layers was the C concentration in the dielectric layers rather than the formation enthalpy of the Ti compounds (TiC and TiSi). Crystalline TiC was formed on the dielectric layers with a C concentration higher than 17 at.%.

经高温退火后，Cu（Ti）膜与SiO_2/Si衬底之间形成了薄的富Ti扩散势垒层。这项技术被称为“扩散势垒的自我形成”，对超大规模集成（ULSI）互连的制造具有吸引力。此外，我们研究了该技术在Cu（Ti）合金薄膜上的适用性，这些薄膜沉积在四个低介电常数（low-k）介电层上，这些介电层是未来ULSI-Si器件的潜在介电层。利用透射电子显微镜（TEM）和二次离子质谱（SIMS）分析了Cu（Ti）薄膜的微观结构，并将其与薄膜的电学性能进行了相关性分析。结果表明，Cu(Ti)/介电层样品均形成了富Ti界面层。控制自形成富钛界面层组成的主要因素是介电层中的C浓度，而不是Ti化合物（TiC和TiSi）的形成焓。当C浓度大于17 at.%时，在介质层上形成结晶TiC。

项目成果

Self-formation of Ti-rich interfacial layers at Cu(Ti)/low-k interfaces

Cu(Ti)/低k界面处自形成富钛界面层

• 发表时间: 2008
• 期刊: MRS Proceedings (in press)
• 作者: K. Kohama;K. Ito;S. Tsukimoto;K. Mori;K. Maekawa and M. Murakami
• 通讯作者: K. Maekawa and M. Murakami

半導体配線の製造方法

半导体布线的制造方法

• 发表时间: 2006

Cu(Ti)合金微細配線における極薄バリア層の自己組織形成

Cu(Ti)合金精细互连中超薄势垒层的自组织

• 发表时间: 2006
• 期刊: 日本金属学会会報(まてりあ) 45
• 作者: 着本 享;大西隆;伊藤 和博;村上 正紀;今野充;矢口紀恵;上野武志
• 通讯作者: 上野武志

低濃度Cu(TD合金薄膜における自己組織化拡散バリア層形成反応の基板依存性

低浓度Cu（TD合金薄膜）中自组装扩散阻挡层形成反应的基底依赖性

• 发表时间: 2008
• 作者: 小濱和之;佐藤大樹;伊藤和博;他
• 通讯作者: 他

Cu(Ti)合金薄膜における自己組織化バリア層の形成に及ぼす基板絶縁膜の影響

衬底绝缘膜对Cu(Ti)合金薄膜自组装势垒层形成的影响

• 发表时间: 2007
• 作者: 小濱和之;伊藤和博;着本享;他
• 通讯作者: 他