Fundamentals of THz Circuits and Systems in Advanced SiGe HBT Technologies

半导体器件的运行速度已经从基础科学到实际应用深刻地改变了我们的现代工业世界。先进的SiGe HBT双极晶体管技术已经解锁了现代电子系统无法获得的电磁频谱部分。Dotseven 2 IC的目标是从根本上了解从毫米波到太赫兹频率的新过渡区域中先进SiGe HBT技术的局限性和能力。这将通过将探索性电路设计与面向反馈的器件优化相结合来实现，以系统地了解限制性能的关键瓶颈。权衡涉及HBT晶体管的制造和设计，高度集成的发射器/接收器电路约300 GHz和基本的太赫兹构建块。Dotseven 2 IC将利用当今最快的SiGe HBT来研究以前所未有的速度运行的前沿电路和系统，并确定阻止进一步性能提升的根本问题。

The speed at which semiconductor devices operate has profoundly transformed our modern industrial world from fundamental science through practical applications. Advanced SiGe HBT bipolar-transistor technologies have unlocked parts of the electromagnetic spectrum otherwise inaccessible to modern electronic systems. It is the aim of Dotseven2IC to fundamentally understand the limitations and capabilities of advanced SiGe HBT technologies in this new transition region from mmWave to THz frequencies. This will be reached by combining exploratory circuit design with feedback-oriented device optimization to systematically understand the key bottlenecks that limit performance. Trade-offs involve HBT transistor fabrication and design, highly integrated transmitter/receiver circuits around 300 GHz and fundamental THz building blocks. Dotseven2IC will exploit today's fastest SiGe HBTs to research leading-edge circuits and systems operating at unprecedented speeds and to identity the fundamental issues preventing further performance gains.