High performance diffractometer for analysis of thin and epitaxial layers

对于外延生长的III-V化合物半导体、压电层和金属、陶瓷或玻璃薄层的结构表征，我们需要一台高性能的X射线衍射仪。能够继续和优化这类材料的发展。有必要获得关于它们的晶格参数和结构、应变状态、织构和相分布的信息。特别是，在晶格不匹配的衬底上表征非常薄的单晶和外延生长的薄膜需要高分辨率的x射线衍射、倒易空间映射、优雅入射(广角和小角散射)和反射测量等方法，这需要具有优化光学系统的五角Gradle设置。遗憾的是，克劳斯塔尔技术大学安装的X射线衍射仪是粉末衍射仪或具有两个角度的测角仪，因此不适合我们的需要。此外，对于应变状态的表征、微观结构和相分布的分析或非均匀样品的结构的空间映射，我们需要点聚焦光学。由于我们所研究的一些材料组的应变状态强烈依赖于温度，我们希望安装一个加热室，在其中可以在特定的大气条件下进行结构表征，以研究微观结构变化的温度依赖性。

For the structural characterization of epitaxially grown III-V compound semiconductors, piezoelectric layers and thin metallic, ceramic or glass layers, we need a high performance x-ray diffractometer. To be able to continue and optimize the development of such materials. it is necessary to obtain information about their lattice parameters and structure, strain states, texture and phase distribution. In particular, characterization of very thin monocrystalline and epitaxially grown films on lattice-mismatched substrates requires methods such as high-resolution x-ray diffraction, reciprocal space mapping, gracing incidence (wide-angle as well as small-angle scattering) and reflectometry, which requires a five angle gradle setup with optimized optics. Unfortunately, the installed x-ray diffractometer at Clausthal University of Technology are powder diffractometer or have a two angle goniometer and are therefore not suitable for our needs. Additionally, for characterization of strain state, analysis of micro structure and phase distribution or spatial mapping of the structure of inhomogenous samples, we need a point focus optics. Since the strain state is strongly dependend on temperature in some by us investigated material groups, we would like to install a heating chamber, in which structural characterization can be carried out under specific atmospheric condition to study the temperature dependence of changes in the microstructure.