MBE growth of a semiconductin gmaterial for blue light lasers

我们在MBE（100）GaAs基底上呈现了与晶格匹配的ZnSxSel-x的最佳增长条件。表面形态学、X射线分化和光致发光被检测，最佳生长条件被揭示为后续：第六组和第二组元素的分子光束强度比率在2.0左右，基底温度为340 ° C。分子光束残留意味着第六组和第二组原子的表面覆盖部分在增长期间处于相同的水平。它是由比较的光特性，其中ZnS_xSe_<l-x> epilayers的质量高于ZnSe.Nitrogen doped ZnS_xSe_<l-x> epilayers在GaAs substrates using NH_3 as a doping gas中使用的气体。这些层主要是由Photoluminescence来表征的。Exciton Emissions绑定到一个中性接受者（^1_）在N-doped ZnSe中被强烈观察。接受者的级别被确定为110 MeV，根据Haynes的规则。同样的价值来自FA发射能量。我们还观察到了与lattice-chns_xSe_<l-x> epilayer中的I^S_发射，但这些发射并不是异常发射区的主要发射。接收器水平被确定为约117 MeV，从ZnS_xSe_<l-x>的FA发射能量：N。FA emission intensities at 60 K were proportionaly increased with increasing the NH_3 source supply。我们试图通过cracking the NH_3.gas来增加doping efficiency。在300 ° C左右的裂缝温度下，效率略有增加，但粗糙的改进没有得到实现。找到N-doped ZnSe和ZnS_xSe_<l-x> were excellent and no deterioration due。

We present the optimum growth conditions of lattice-matched ZnSxSel-x by MBE on (100)GaAs substrates. Surface morphology, X-ray diffraction and photoluminescence were investgated, and the optimum growth conditions were revealed as follows: The molecular beam intensity ratio of the group VI to II element is around 2.0 and the substrate temperature is 340゜C. The molecular beam retio means that the surface coverage fraction of the group VI and group II atoms are the same during growth. It is shown by comparing the photoluminescence spectra that the quality of the ZnS_xSe_<l-x> epilayers was higher than that of ZnSe.Nitrogen doped ZnS_xSe_<l-x> epilayers were grown on GaAs substrates using NH_3 as a doping gas. These layers were characterized mainly by photoluminescence. Exciton emissions bound to a neutral acceptor(^1_) were strongly observed in N-doped ZnSe. The acceptor level was determined to be 110meV by using Haynes' rule. The same value was obtained from the FA emission energy. We also observed the I^S_ emissions in lattice-matched ZnS_xSe_<l-x> epilayers, slthough these emissions were not the main emissions in the exciton emission region. The acceptor level was determined to be about 117 meV from the FA emission energy of ZnS_xSe_<l-x>:N. The FA emission intensities at 60K were proportionaly increased with increasing the NH_3 source supply. We attempted to increase the doping efficiency by cracking the NH_3.gas. The efficiencies slightly increased at around the cracking temperature of 300゜C, but the drastic improvement was not achieved. Morphologies and crystallinities of both N-doped ZnSe and ZnS_xSe_<l-x> were excellent and no deterioration due to N-doping was found.