Organic lattice matching hetero epitaxy growth by strength oscillating monitoring of reflection high energy electron diffraction
Organic lattice matching hetero epitaxy growth by strength oscillating monitoring of reflection high energy electron diffraction
批准号:
23560001
负责人:
ITAKA Kenji
金额:
$3.49万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011 至 2013
中文摘要
由于有机半导体不同于无机材料,半导体工程中的常识往往被忽视。然而,我们已经证明这是在半导体技术的范畴下解决的。针对一种多通道平板反射式高能电子衍射观测系统,对器件结构进行了改进,以改进双层薄膜的形成工艺。当然,对于使用多通道板的高灵敏度屏幕的数据融合,摄像板被改为1024级(旧的256级)。即使在动态范围扩展并且基片和薄膜的峰的强度随这些变化很大的情况下,也可以通过从沉积开始的时间起对光量进行相同的调整来测量。
英文摘要
Since the organic semiconductors differ from the inorganic materials, the common sense in semiconductor engineering tends to be overlooked.However, we have shown that it is settled under the category of semiconductor technology.About a multichannel plate reflection high energy electron diffraction observation system, device structure was improved for improvement in layer bilayer film forming technology. Definitely, the image taking board was changed into 1024 gradation (old one is 256 gradation) about data incorporation of the high sensitivity screen which used the multichannel plate. Even in cases where a dynamic range spread and the strength of the peak of the substrate and the peak of thin film changed considerably with these, it could measure by the same adjustment in the quantity-of-light from the time of the deposition start.
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