Organic lattice matching hetero epitaxy growth by strength oscillating monitoring of reflection high energy electron diffraction

由于有机半导体不同于无机材料，半导体工程中的常识往往被忽视。但是，我们已经表明，它是在半导体技术的范畴下解决的。针对多通道板反射高能电子衍射观测系统，改进了器件结构，改进了双层成膜技术。显然，采用多通道板的高灵敏度屏的数据合并，将图像采集板改为1024级（旧的是256级）。即使在动态范围扩展的情况下，衬底和薄膜峰值的强度也会随之发生很大变化，从沉积开始时起，也可以通过相同的光量调整来测量。

Since the organic semiconductors differ from the inorganic materials, the common sense in semiconductor engineering tends to be overlooked.However, we have shown that it is settled under the category of semiconductor technology.About a multichannel plate reflection high energy electron diffraction observation system, device structure was improved for improvement in layer bilayer film forming technology. Definitely, the image taking board was changed into 1024 gradation (old one is 256 gradation) about data incorporation of the high sensitivity screen which used the multichannel plate. Even in cases where a dynamic range spread and the strength of the peak of the substrate and the peak of thin film changed considerably with these, it could measure by the same adjustment in the quantity-of-light from the time of the deposition start.